Datasheet > S-LMBTA55LT3G

S-LMBTA55LT3G

更新时间： 2024-11-07 02:51:27

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		/
页数	文件大小	规格书
3页	305K
描述
Driver Transistors PNP Silicon

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S-LMBTA55LT3G 数据手册

LMBTA55LT1G

DriverTransistors

PNP Silicon

We declare that the material of product

compliance with RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

MAXIMUM RATINGS

Value

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

LMBTA55

LMBTA56

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

–60

–80

–60

–80

Vdc

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

–4.0

–500

Vdc

mAdc

COLLECTOR

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

BASE

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P _D

225

EMITTER

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _θJA

P _D

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _θJA

417

T _J, T _stg

–55 to +150

DEVICE MARKING

(S-)LMBTA55LT1G = 2H; (S-)LMBTA56LT1G = 2GM

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (3)

(I _C= –1.0 mAdc, I _B= 0 )

V _(BR)CEO

Vdc

LMBTA55

LMBTA56

–60

–80

—

Emitter–Base Breakdown Voltage

V _(BR)EBO

–4.0

—

Vdc

(I _E= –100 µAdc, I _C= 0 )

Collector Cutoff Current

( V _CE= –60Vdc, I _B= 0)

Collector Cutoff Current

( V _CB= –60Vdc, I _E= 0)

I _CES

I _CBO

–0.1

µAdc

LMBTA55

LMBTA56

—

–0.1

( V _CB= –80Vdc, I _E= 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width

<300 µs, Duty Cycle

<2.0%.

1/3

Rev :01.06.2018

www.leiditech.com

12 3

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