Datasheet > S-LMBTA92LT1G

S-LMBTA92LT1G

更新时间： 2024-09-17 02:52:39

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		/
页数	文件大小	规格书
4页	565K
描述
HighVoltageTransistor PNP Silicon

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

S-LMBTA92LT1G 数据手册

LMBTA92LT1G

LMBTA93LT1G

S-LMBTA92LT1G

S-LMBTA93LT1G

Dimensions SOT-23

High Voltage Transistor

PNP Silicon

FEATURE

ƽHigh voltage.

ƽFor Telephony or Professional communication equipment applications.

We declare that the material of product compliance with RoHS requirements.

ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and

Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

DEVICE MARKING AND ORDERING INFORMATION

Pin Configuration

Device

Marking

Shipping

(S-)LMBTA92LT1G

(S-)LMBTA92LT3G

3000/Tape&Reel

10000/Tape&Reel

3000/Tape&Reel

COLLECTOR

(S-)LMBTA93LT1G

(S-)LMBTA93LT3G

BASE

10000/Tape&Reel

MAXIMUM RATINGS

EMITTER

Value

Rating

Symbol LMBTA92 LMBTA93 Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

V _CEO

V _CBO

V _EBO

I _C

–300

–200

Vdc

–5.0

Vdc

–500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

225

TA = 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

RθJA

Alumina Substrate, (2) T

= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

417

, T^stg

–55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width 300 µs, Duty Cycle

< 2.0%.

1/4

01.06.2015

Rev :

www.leiditech.com

12 3 4

中文翻译

下载PDF

与S-LMBTA92LT1G相关器件

型号	品牌	获取价格	描述	数据表
S-LMBTA93LT1G	LEIDITECH	获取价格	HighVoltageTransistor PNP Silicon
S-LMBTA93LT3G	LEIDITECH	获取价格	HighVoltageTransistor PNP Silicon
S-LMBZ5221BLT1G	LRC	获取价格	Zener Voltage Regalators
S-LMBZ5221BLT3G	LRC	获取价格	Zener Voltage Regalators
SLMD107S	RECTRON	获取价格	Reverse Voltage Vr : 1000 V;Forward Current Io : 1.0 A;Max Surge Current : 30 A;Forward Vo
SLMD121H04	IXYS	获取价格	IXOLAR High Efficiency SolarMD
SLMD121H04L	IXYS	获取价格	Photovoltaic Solar Cell,
SLMD121H06L	IXYS	获取价格	Photovoltaic Solar Cell,
SLMD121H08L	IXYS	获取价格	Photovoltaic Solar Cell,
SLMD121H09L	IXYS	获取价格	Photovoltaic Solar Cell,