Datasheet > S-LMBT4403DW1T1G

S-LMBT4403DW1T1G

更新时间： 2024-11-07 01:20:07

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
6页	399K
描述
DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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S-LMBT4403DW1T1G 数据手册

LESHAN RADIO COMPANY, LTD.

DUAL SMALL SIGNAL SURFACE

LMBT4403DW1T1G

S-LMBT4403DW1T1G

MOUNT TRANSISTOR

•

We declare that the material of product compliance with RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

ORDERING INFORMATION

Device

Marking

Shipping

LMBT4403DW1T1G

3000/Tape&Reel

10000/Tape&Reel

S-LMBT4403DW1T1G

SOT-363/SC-88

LMBT4403DW1T3G

S-LMBT4403DW1T3G

MAXIMUM RATINGS

C₁

B₂

E₂

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

– 40

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

– 40

Vdc

– 5.0

– 600

Vdc

Q₂

Q₁

Collector Current — Continuous

mAdc

THERMAL CHARACTERISTICS

E₁

C₂

B₁

Characteristic

Symbol

Max

Unit

(1)

Total Package Dissipation

P_D

150

°C/W

°C

= 25°C

Thermal Resistance Junction to

Ambient

R_qJA

833

Junction and Storage

Temperature Range

T_J, T

–55 to +150

stg

DEVICE MARKING

LMBT4403DW1T1G=2T

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted)

Characteristic Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (3)

(I _C= –1.0 mAdc, I _B= 0)

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I _BEV

Vdc

– 40

– 5.0

—

Collector–Base Breakdown Voltage

(I _C= –0.1mAdc, I _E= 0)

Emitter–Base Breakdown Voltage

(I _E= –0.1mAdc, I _C= 0)

Vdc

—

Base Cutoff Current

µAdc

(V _CE= –35 Vdc, V _EB= –0.4 Vdc)

Collector Cutoff Current

– 0.1

I _CEX

(V _CE= –35 Vdc, V _EB= –0.4 Vdc)

—

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width

<300 µs; Duty Cycle <2.0%.

Rev.O 1/6

12 3 4 5 6

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