Datasheet > S-LMBT4401DW1T1G

S-LMBT4401DW1T1G

更新时间： 2024-09-17 01:20:07

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
6页	408K
描述
DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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中文翻译

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数据手册

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S-LMBT4401DW1T1G 数据手册

LESHAN RADIO COMPANY, LTD.

DUAL SMALL SIGNAL SURFACE

MOUNT TRANSISTOR

LMBT4401DW1T1G

S-LMBT4401DW1T1G

•

We declare that the material of product compliance with RoHS requirements.

•

S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

ORDERING INFORMATION

Device

Marking

Shipping

LMBT4401DW1T1G

3000/Tape&Reel

10000/Tape&Reel

S-LMBT4401DW1T1G

LMBT4401DW1T3G

S-LMBT4401DW1T3G

MAXIMUM RATINGS

SOT-363/SC-88

Rating

Symbol

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

V _CEO

V _CBO

V _EBO

I _C

Vdc

C₁

B₂

E₂

6.0

Vdc

600

mAdc

Q₂

Q₁

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

E₁

C₂

B₁

(1)

Total Package Dissipation

P_D

150

= 25°C

Thermal Resistance Junction to

Ambient

R_qJA

833

°C/W

°C

Junction and Storage

Temperature Range

T_J, T

–55 to +150

stg

DEVICE MARKING

LMBT4401DW1T1G = 2X

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (2)

(I _C= 1.0 mAdc, I _B= 0)

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I _BEV

Vdc

6.0

—

Collector–Base Breakdown Voltage

(I _C= 0.1 mAdc, I _E= 0)

Emitter–Base Breakdown Voltage

(I _E= 0.1 mAdc, I _C= 0)

Vdc

—

Base Cutoff Current

µAdc

(V _CE= 35 Vdc, V _EB= 0.4 Vdc)

Collector Cutoff Current

0.1

I _CEX

(V _CE= 35 Vdc, V _EB= 0.4 Vdc)

—

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

1. recommended footprint.

2. Pulse Test: Pulse Width

<300 µs; Duty Cycle <2.0%.

Rev.O 1/6

12 3 4 5 6

中文翻译

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