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SKIIP81ANB15T1 PDF预览

SKIIP81ANB15T1

更新时间: 2024-10-26 21:15:03
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管二极管
页数 文件大小 规格书
2页 129K
描述
Bridge Rectifier Diode, 3 Phase, 100A, 1500V V(RRM), Silicon, CASE M8A, MINISKIIP-11

SKIIP81ANB15T1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-XXSS-X11针数:11
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:5.76其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN IGBT
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-XXSS-X11JESD-609代码:e2
最大非重复峰值正向电流:1000 A元件数量:6
相数:3端子数量:11
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:100 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:SPECIAL SHAPE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1500 V子类别:Other Diodes
表面贴装:NO端子面层:Tin/Silver (Sn/Ag)
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SKIIP81ANB15T1 数据手册

 浏览型号SKIIP81ANB15T1的Datasheet PDF文件第2页 
MiniSKiiP 8  
SKiiP 81 ANB 15 T1  
SEMIKRON integrated  
intelligent Power  
Absolute Maximum Ratings  
Symbol Conditions 1)  
Bridge Rectifier  
VRRM  
Values  
Units  
SKiiP 81 ANB 15 T1  
3-phase bridge rectifier +  
IGBT braking chopper  
1500  
100 3)  
1000  
5000  
V
A
A
ID  
Theatsink = 80 °C  
IFSM  
I²t  
tp = 10 ms; sin. 180°, Tj = 25 °C  
tp = 10 ms; sin. 180°, Tj = 25 °C  
A²s  
IGBT Chopper  
VCES  
VGES  
IC  
1200  
± 20  
33 / 22  
66 / 44  
V
V
A
A
Case M8a  
Theatsink = 25 / 80 °C  
tp < 1 ms; Theatsink = 25 / 80 °C  
ICM  
Freewheeling Diode 2)  
VRRM  
IF  
IFM  
1200  
24 / 17  
48 / 34  
V
A
A
Theatsink = 25 / 80 °C  
tp < 1 ms; Theatsink = 25 / 80 °C  
Tj  
Tstg  
Visol  
Diode & IGBT  
– 40 ... + 150  
– 40 ... + 125  
2500  
°C  
°C  
V
AC, 1 min.  
Characteristics  
Symbol Conditions 1)  
Diode - Rectifier  
min.  
typ.  
max.  
Units  
VF  
VTO  
rT  
IF = 75 A  
Tj = 125 °C  
1,15  
0,8  
4,5  
V
V
m  
K/W  
Tj = 125 °C  
Tj = 125 °C  
per diode  
Rthjh  
1,0  
UL recognized file no. E63532  
IGBT - Chopper  
VCEsat  
td(on)  
tr  
td(off)  
tf  
Eon + Eoff  
Cies  
Rthjh  
IC = 25 A  
Tj = 25 (125) °C  
VCC = 600 V; VGE = ± 15 V  
IC = 25 A; Tj = 125 °C  
2,5(3,1)  
75  
65  
400  
50  
6,2  
1,65  
3,0(3,7)  
V
ns  
ns  
ns  
ns  
mJ  
nF  
K/W  
specification of temperature  
sensor see part A of data book  
´99  
common characteristics see  
page B 16 – 4 of data book ´99  
R
gon = Rgoff = 47 Ω  
inductive load  
VCE = 25 V; VGE = 0 V, 1 MHz  
1,0  
per IGBT  
Diode 2) - Chopper  
VF = VEC IF = 15 A  
Tj = 25 (125) °C  
2,0(1,8)  
1,0  
53  
2,5(2,3)  
V
V
mΩ  
A
µC  
mJ  
K/W  
1)  
T
= 25 °C, unless otherwise  
heatsink  
VTO  
rT  
Tj = 125 °C  
Tj = 125 °C  
1,2  
73  
specified  
2) CAL = Controlled Axial Lifetime  
Technology (soft and fast recovery)  
3) limited by spring contact  
IRRM  
Qrr  
IF = 15 A; VR = – 600 V  
diF/dt = – 400 A/µs  
16  
2,7  
0,6  
Eoff  
Rthjh  
VGE = 0 V, Tj = 125 °C  
per diode  
1,7  
Temperature Sensor  
RTS  
T = 25 / 100 °C  
1000 / 1670  
Mechanical Data  
M1  
mounting torque  
2,5  
3,5  
Nm  
Case  
mechanical outline see pages  
B 16 –13 and B 16 – 14  
M8a  
© by SEMIKRON  
000621  
1

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