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SKIIP912GB120-303WT PDF预览

SKIIP912GB120-303WT

更新时间: 2024-11-18 15:51:23
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON
页数 文件大小 规格书
7页 322K
描述
Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES,

SKIIP912GB120-303WT 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.72
最大集电极电流 (IC):900 A集电极-发射极最大电压:1200 V
最高工作温度:150 °C子类别:Insulated Gate BIP Transistors
VCEsat-Max:3.2 VBase Number Matches:1

SKIIP912GB120-303WT 数据手册

 浏览型号SKIIP912GB120-303WT的Datasheet PDF文件第2页浏览型号SKIIP912GB120-303WT的Datasheet PDF文件第3页浏览型号SKIIP912GB120-303WT的Datasheet PDF文件第4页浏览型号SKIIP912GB120-303WT的Datasheet PDF文件第5页浏览型号SKIIP912GB120-303WT的Datasheet PDF文件第6页浏览型号SKIIP912GB120-303WT的Datasheet PDF文件第7页 

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