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SKIIP992GAL170-377CTVF PDF预览

SKIIP992GAL170-377CTVF

更新时间: 2024-10-26 20:58:47
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 驱动接口集成电路
页数 文件大小 规格书
1页 16K
描述
Buffer/Inverter Based Peripheral Driver, 1125A

SKIIP992GAL170-377CTVF 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.84
内置保护:TRANSIENT; OVER CURRENT; THERMAL接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-XXMA-X功能数量:1
最高工作温度:85 °C最低工作温度:-25 °C
输出电流流向:SOURCE标称输出峰值电流:1125 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY认证状态:Not Qualified
标称供电电压:15 V电源电压1-Nom:24 V
表面贴装:NO温度等级:OTHER
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
Base Number Matches:1

SKIIP992GAL170-377CTVF 数据手册

  
SKiiP 992 GAL 170 - 377 CTV  
Absolute Maximum Ratings  
SKiiPPACK  
SK integrated intelligent  
Power PACK  
Symbol Conditions1)  
Values  
4000  
Units  
V
4)  
Visol  
AC, 1min  
boost converter  
SKiiP  
Top ,Tstg  
Operating / stor. temperature  
-25...+85  
°C  
992 GAL 170 - 377 CTV 7,9)  
IGBT and Diode  
VCES  
1700  
1200  
V
V
A
°C  
A
Preliminary Data  
Case S3  
5)  
VCC  
IC  
Tj  
Operating DC link voltage  
IGBT  
IGBT + Diode  
Diode  
3)  
-40...+150  
IF  
IFM  
IFSM  
Diode, tp < 1 ms  
Diode, Tj = 150 °C, 10ms; sin  
A
A
I2t (Diode) Diode, Tj = 150 °C, 10ms  
Driver  
1143  
kAs2  
VS1  
VS2  
fsmax  
dV/dt  
Stabilized Power Supply  
Non-stabilized Power Supply  
Switching frequency  
18  
30  
11,0  
75  
V
V
kHz  
kV/µs  
Primary to secondary side  
Characteristics  
Symbol Conditions 1)  
min.  
typ.  
max.  
Units  
Features  
IGBT  
V(BR)CES  
ICES  
Short circuit protection, due to  
evaluation of current sensor  
signals  
Driver without supply  
V
mA  
mA  
VCES  
2
105  
VGE = 0,  
CE = VCES  
Tj = 25 °C  
Tj = 125 °C  
V
Isolated power supply  
Low thermal impedance  
Optimal thermal management  
with integrated heatsink  
Pressure contact technology  
with increased power cycling  
capability, compact design  
Low stray inductance  
High power, small losses  
Over-temperature protection  
VTO  
rT  
VCesat  
VCesat  
Tj = 125 °C  
Tj = 125 °C  
IC = 900A,  
IC = 900A,  
1,77  
4,6  
5,9  
3,85  
761/117  
1
V
mΩ  
V
V
mJ  
Tj = 125 °C  
Tj = 25 °C  
Eon + Eoff VCC=900/1200V, IC=900A  
Tj = 125 °C  
CCHC  
LCE  
FWD Diode 2)  
VF = VEC IF= 900A;  
VF= VEC  
Eon + Eoff IF= 900A;  
VTO  
rT  
per Phase, AC side  
Top, Bottom  
2,4  
5
nF  
nH  
1)  
Theatsink = 25 °C, unless  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
1,59  
V
V
mJ  
V
2,80  
otherwise specified  
CAL = Controlled Axial Lifetime  
2)  
IF= 900A;  
108  
0,90  
0,8  
Technology (soft and fast)  
without driver  
Driver Input to Power Input/  
3)  
Tj = 125 °C  
Tj = 125 °C  
4)  
mΩ  
Power Output to Heatsink  
with Semikron-DC link (low  
inductance)  
other heatsinks on request  
C - Integrated current sensors  
T - Temperature protection  
V - 15 V or 24 V power supply  
AC connection busbars must be  
Thermal Characteristics  
5)  
10)  
Rthjs  
Rthjs  
Rthsa  
per IGBT  
per Diode  
P16 heatsink; see case S3  
0,025  
0,036  
0,036  
°C/W  
°C/W  
°C/W  
10)  
6)  
6,10)  
7)  
Driver  
IS1  
IS2  
Supply current 15V-supply  
Supply current 24V-supply  
Interlock-time  
320+710*fs/fsmax+1,3*IAC/A  
240+520*fs/fsmax+1,0*IAC/A  
-
mA  
mA  
µs  
8)  
tinterlock-driver  
connected by the user; copper  
busbars available on request  
options available for driver:  
U - DC link voltage sense  
F – Fiber optic connector  
s” referenced to temperature  
sensor  
9)  
A
A
°C  
V
1125 ± 2%  
-
115 ± 5%  
1225 ± 2%  
10)  
M1  
M2  
DC terminals, SI Units  
AC terminals, SI Units  
4
8
6
10  
Nm  
Nm  
by SEMIKRON  
15.07.99  

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