5秒后页面跳转
捷配首页

Datasheet > SKIIP832GB120-406CTVF
SKIIP832GB120-406CTVF PDF预览

SKIIP832GB120-406CTVF

更新时间： 2024-10-26 19:47:39
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 驱动接口集成电路
页数 文件大小 规格书
1页 15K
描述
Half Bridge Based Peripheral Driver, 1000A

阅读下载

中文翻译

获取价格

SKIIP832GB120-406CTVF 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.84
内置保护：TRANSIENT; OVER CURRENT; THERMAL接口集成电路类型：HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码：R-XXMA-X功能数量：1
最高工作温度：85 °C最低工作温度：-25 °C
输出电流流向：SOURCE AND SINK标称输出峰值电流：1000 A
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：MICROELECTRONIC ASSEMBLY认证状态：Not Qualified
标称供电电压：15 V表面贴装：NO
温度等级：OTHER端子形式：UNSPECIFIED
端子位置：UNSPECIFIEDBase Number Matches：1

SKIIP832GB120-406CTVF 数据手册

  
SKiiP 832 GB 120 - 406 CTV  
Absolute Maximum Ratings  
SKiiPPACK  
SK integrated intelligent  
Power PACK  
halfbridge  
Symbol Conditions1)  
Values  
3000  
Units  
V
4)  
Visol  
AC, 1min  
Top ,Tstg  
Operating / stor. temperature  
-25...+85  
°C  
SKiiP  
832 GB 120 - 406 CTV 7,9)  
IGBT and Inverse Diode  
VCES  
1200  
900  
800  
V
V
A
°C  
A
Preliminary Data  
Case S4  
5)  
VCC  
IC  
Tj  
Operating DC link voltage  
IGBT  
IGBT + Diode  
Diode  
3)  
-40...+150  
800  
IF  
IFM  
IFSM  
Diode, tp < 1 ms  
Diode, Tj = 150 °C, 10ms; sin  
1600  
5760  
166  
A
A
I2t (Diode) Diode, Tj = 150 °C, 10ms  
Driver  
kAs2  
VS1  
VS2  
fsmax  
dV/dt  
Stabilized Power Supply  
Non-stabilized Power Supply  
Switching frequency  
18  
30  
19  
75  
V
V
kHz  
kV/µs  
Primary to secondary side  
Characteristics  
Symbol Conditions 1)  
min.  
typ.  
max.  
Units  
Features  
IGBT11)  
V(BR)CES  
• Short circuit protection, due to  
evaluation of current sensor  
signals  
Driver without supply  
V
mA  
mA  
≥VCES  
−
−
−
−
40  
−
1,2  
−
ICES  
VGE = 0,  
Tj = 25 °C  
Tj = 125 °C  
VCE = VCES  
• Isolated power supply  
• Low thermal impedance  
• Optimal thermal management  
with integrated heatsink  
• Pressure contact technology  
with increased power cycling  
capability, compact design  
• Low stray inductance  
• High power, small losses  
• Over-temperature protection  
VTO  
rT  
VCesat  
VCesat  
Tj = 125 °C  
Tj = 125 °C  
IC = 700A,  
IC = 700A,  
1,38  
2,6  
3,2  
3,05  
240/390  
V
mΩ  
V
V
mJ  
−
−
−
−
−
−
−
−
−
−
Tj = 125 °C  
Tj = 25 °C  
Eon + Eoff VCC=600/900V,IC=800A  
Tj = 125 °C  
CCHC  
LCE  
per SkiiP, AC side  
Top, Bottom  
4,2  
5
nF  
nH  
−
−
−
−
Inverse Diode 2)  
1)  
Theatsink = 25 °C, unless  
VF = VEC IF= 700A;  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
2,45  
2,55  
32  
V
V
mJ  
V
−
−
−
−
−
−
−
−
0,91  
1,4  
otherwise specified  
CAL = Controlled Axial Lifetime  
VF= VEC  
IF= 700A;  
2)  
Eon + Eoff IF= 800A;  
Technology (soft and fast)  
without driver  
Driver input to DC link/ AC  
3)  
VTO  
rT  
Tj = 125 °C  
Tj = 125 °C  
−
−
4)  
mΩ  
output to heatsink  
with Semikron-DC link (low  
inductance)  
other heatsinks on request  
C - Integrated current sensors  
T - Temperature protection  
V - 15 V or 24 V power supply  
AC connection busbars must be  
Thermal Characteristics  
10)  
5)  
Rthjs  
Rthjs  
Rthsa  
per IGBT  
per Diode  
P16 heatsink; see case S4  
0,032  
0,094  
0,033  
°C/W  
°C/W  
°C/W  
−
−
−
−
−
−
10)  
6)  
6,10)  
7)  
Driver  
IS1  
IS2  
Supply current 15V-supply  
Supply current 24V-supply  
Interlock-time  
290+550*fs /fsmax+1,3*IAC/A  
220+400*fs /fsmax+1,0*IAC/A  
3,3  
mA  
mA  
µs  
8)  
tinterlock-driver  
connected by the user; copper  
busbars available on request  
options available for driver:  
U - DC link voltage sense  
F – Fiber optic connector  
“s” referenced to temperature  
sensor  
NPT-technology with homo-  
genous current-distribution  
SKiiPPACK protection  
9)  
ITRIPSC  
ITRIPLG  
TTRIP  
Short circuit protection  
A
A
°C  
V
1000 ± 2%  
-
Ground fault protection  
Over-temp. protection  
UDC-protection  
115 ± 5%  
920 ± 2%  
10)  
9)  
UDCTRIP  
11)  
Mechanical Data  
M1  
DC terminals, SI Units  
4
8
6
10  
Nm  
Nm  
−
−
M2  
AC terminals, SI Units  
28.01.99  
by SEMIKRON  
1

中文翻译

下载PDF

与SKIIP832GB120-406CTVF相关器件

型号 品牌 获取价格 描述 数据表
SKIIP832GB120-406CTVU SEMIKRON

获取价格

 		Half Bridge Based Peripheral Driver, 1000A
SKIIP832GB120-4D SEMIKRON

获取价格

 		2-pack - integrated intelligent Power System
SKIIP832GB120-4D_07 SEMIKRON

获取价格

 		2-pack - integrated intelligent Power System
SKIIP83AC12 SEMIKRON

获取价格

 		Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel, CASE M8, MINISKII
SKIIP83ANB08 ETC

获取价格

 		模块
SKIIP83ANB15T1 SEMIKRON

获取价格

 		Bridge Rectifier Diode, 3 Phase, 100A, 1500V V(RRM), Silicon, CASE M8A, MINISKIIP-11
SKIIP912GB120031 SEMIKRON

获取价格

 		Large IGBT Power Packs
SKIIP912GB120-303FT SEMIKRON

获取价格

 		Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES,
SKIIP912GB120303W SEMIKRON

获取价格

 		Large IGBT Power Packs
SKIIP912GB120303W-F SEMIKRON

获取价格

 		Large IGBT Power Packs

与SKIIP832GB120-406CTVF相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证