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SKIIP83AC12 PDF预览

SKIIP83AC12

更新时间： 2024-10-26 21:22:15
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 栅功率控制晶体管
页数 文件大小 规格书
5页 285K
描述
Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel, CASE M8, MINISKIIP-27

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SKIIP83AC12 技术参数

生命周期：Obsolete包装说明：SPECIAL SHAPE, R-XXSS-X27
针数：27Reach Compliance Code：unknown
风险等级：5.83其他特性：UL RECOGNIZED
外壳连接：ISOLATED最大集电极电流 (IC)：125 A
集电极-发射极最大电压：1200 V配置：BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
门极-发射极最大电压：20 VJESD-30 代码：R-XXSS-X27
元件数量：6端子数量：27
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：SPECIAL SHAPE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
子类别：Insulated Gate BIP Transistors表面贴装：NO
端子形式：UNSPECIFIED端子位置：UNSPECIFIED
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：470 ns标称接通时间 (ton)：105 ns
VCEsat-Max：3 VBase Number Matches：1

SKIIP83AC12 数据手册

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SKiiP 83 AC 12 - SKiiP 83 AC 12 I  
Absolute Maximum Ratings  
MiniSKiiP 8  
SEMIKRON integrated  
intelligent Power  
Symbol  
Conditions 1)  
Values  
Units  
SKiiP 83 AC 12  
SKiiP 83 AC 12 I 3)  
SKiiP 83 AC 12 IS 4)  
VCES  
VGES  
IC  
1200  
± 20  
125 / 85  
V
V
A
Theatsink = 25 / 80 °C  
IGBT  
ICM  
Tj  
tp < 1 ms; Theatsink = 25 / 80 °C  
250 / 170  
– 40 . . . + 150  
– 40 . . . + 125  
2500  
A
3-phase bridge inverter  
°C  
°C  
V
Tstg  
Visol  
AC, 1 min.  
Case M8  
Inverse Diode  
IF = –IC  
heatsink = 25 / 80 °C  
IFM = –ICM tp < 1 ms; Theatsink = 25 / 80 °C  
T
80 / 53  
160 / 106  
720  
A
A
IFSM  
tp = 10 ms; sin., Tj = 25 °C  
tp = 10 ms; sin., Tj = 25 °C  
A
I2t  
2600  
A2s  
Characteristics  
Symbol  
Conditions 1)  
min.  
typ.  
max. Units  
IGBT - Inverter  
VCEsat  
td(on)  
tr  
td(off)  
tf  
Eon + Eoff  
Cies  
Rthjh  
IC = 100 A Tj = 25 (125) °C  
CC = 600 V; VGE = ± 15 V  
IC = 100 A; Tj = 125 °C  
gon = Rgoff = 11 Ω  
–
–
–
–
–
–
–
–
2,5(3,1) 3,0(3,7)  
V
ns  
ns  
ns  
ns  
mJ  
nF  
K/W  
V
50  
55  
400  
70  
27  
6,6  
–
100  
110  
600  
100  
–
R
inductive load  
~
~
~
VCE = 25 V; VGE = 0 V, 1 MHz  
per IGBT  
–
0,25  
Diode 2) - Inverter  
VF = VEC IF = 75 A Tj = 25 (125) °C  
–
–
–
–
–
–
–
2,0(1,8) 2,5(2.3)  
V
V
mΩ  
A
µC  
mJ  
K/W  
UL recognized file no. E63532  
VTO  
rT  
Tj = 125 °C  
Tj = 125 °C  
1,0  
11  
45  
11  
3,0  
–
1,2  
15  
–
–
–
• more detailed characteristics of  
current sensors and temperature  
sensor please refer to part A  
• common characteristics see  
page B 16 – 4  
IRRM  
Qrr  
Eoff  
Rthjh  
IF = 75 A, VR = – 600 V  
diF/dt = – 800 A/µs  
GE = 0 V, Tj = 125 °C  
per diode  
V
0,8  
Current sensor for three phase output ac current (SKiiP 83 AC 12 I)  
Ip RMS  
Continuous current,  
T = 100 °C, Vsuppl = ± 15 V  
t ≤ 2 s  
Options  
–
–
–
–
50  
–
1000  
50  
–
80  
–
A
A
A
Ω
• also available with powerful free-  
wheeling diodes. Data sheet on  
request  
Ipmax RMS  
Ip peak  
Rout  
t ≤ 10 µs  
terminating resistance  
rated sensor current  
at Ip = 50 ARMS  
–
Is RMS  
25  
1 : 2000  
± 0,2  
0,1  
mA  
1)  
Theatsink = 25 °C, unless  
Ip : Is  
transfer ratio  
otherwise specified  
CAL = Controlled Axial Lifetime  
Offset error IP = 0 A, T = – 40 ... 100 °C  
Linearity  
delay time IP =  
–
–
–
–
–
–
–
–
mA  
%
µs  
µs  
2)  
Technology (soft and fast  
recovery)  
With integrated closed loop  
10 % – 80 %  
90 % – 20 %  
< 1  
< 1  
3)  
Bandwidth  
0 – 100 (– 3dB) kHz  
current sensors  
Extended current range, data  
4)  
Temperature Sensor  
RTS  
sheet on request  
T = 25 / 100 °C  
1000 / 1670  
Ω
Mechanical Data  
M1  
Case  
case to heatsink, SI Units  
mechanical outline see pages  
B 16 – 11 and B 16 – 12  
2,5  
–
M8  
3,5  
Nm  
© by SEMIKRON  
0698  
B 16 – 67  
12345

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