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SiZ320DT PDF预览

SiZ320DT

更新时间: 2024-10-01 14:54:59
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威世 - VISHAY /
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描述
Dual N-Channel 25 V (D-S) MOSFETs

SiZ320DT 数据手册

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SiZ320DT  
Vishay Siliconix  
www.vishay.com  
Dual N-Channel 25 V (D-S) MOSFETs  
FEATURES  
• TrenchFET® Gen IV power MOSFETs  
PowerPAIR® 3 x 3  
G2  
8
S2  
7
S2  
6
S2  
• 100 % Rg and UIS tested  
5
S1/D2  
(Pin 9)  
• Optimized Qgs/Qgs ratio improves switching  
characteristics  
D1  
1
G1  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
2
D1  
3
D1  
1
4
D1  
Top View  
Bottom View  
D
1
APPLICATIONS  
• CPU core power  
PRODUCT SUMMARY  
CHANNEL-1 CHANNEL-2  
G
1
• Computer / server peripherals  
• POL  
VDS (V)  
25  
0.00830  
0.01270  
4.3  
25  
0.00424  
0.00658  
7.9  
N-Channel 1  
MOSFET  
S /D  
R
DS(on) max. () at VGS = 10 V  
DS(on) max. () at VGS = 4.5 V  
1
2
R
• Synchronous buck converter  
• Telecom DC/DC  
Qg typ. (nC)  
D (A) a, g  
Configuration  
G
2
I
30  
40  
N-Channel 2  
MOSFET  
S
2
Dual  
ORDERING INFORMATION  
Package  
PowerPAIR 3 x 3  
SiZ320DT-T1-GE3  
Lead (Pb)-free and halogen-free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
CHANNEL-1  
CHANNEL-2  
25  
+16, -12  
40 a  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
VGS  
25  
+16, -12  
30 a  
29.2 a  
17.2 b, c  
13.7 b, c  
80  
13.9  
3.1 b, c  
12  
7.2  
V
TC = 25 °C  
C = 70 °C  
TA = 25 °C  
TA = 70 °C  
T
40 a  
Continuous drain current (TJ = 150 °C)  
ID  
24.8 b, c  
19.8 b, c  
120  
25.8  
3.5 b, c  
A
Pulsed drain current (100 μs pulse width)  
Continuous source drain diode current  
IDM  
IS  
T
C = 25 °C  
TA = 25 °C  
L = 100 mH  
TC = 25 °C  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
18  
16.2  
mJ  
W
16.7  
10.7  
3.7 b, c  
2.4 b, c  
31  
20  
4.2 b, c  
2.7 b, c  
T
C = 70 °C  
Maximum power dissipation  
PD  
TA = 25 °C  
TA = 70 °C  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d  
TJ, Tstg  
-55 to +150  
260  
°C  
THERMAL RESISTANCE RATINGS  
CHANNEL-1  
CHANNEL-2  
PARAMETER  
SYMBOL  
UNIT  
TYP.  
27  
MAX.  
34  
TYP.  
24  
MAX.  
30  
Maximum junction-to-ambient b, f  
Maximum junction-to-case (drain)  
t 10 s  
Steady state  
RthJA  
RthJC  
°C/W  
6
7.5  
3.2  
4
Notes  
a. Package limited  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2  
g. TC = 25 °C  
S17-0302-Rev. A, 27-Feb-17  
Document Number: 68279  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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