Datasheet > SiRC06DP

SiRC06DP

更新时间： 2024-11-22 14:55:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	202K
描述
N-Channel 30 V (D-S) MOSFET With Schottky Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiRC06DP 数据手册

SiRC06DP

Vishay Siliconix

www.vishay.com

N-Channel 30 V (D-S) MOSFET With Schottky Diode

FEATURES

PowerPAK^®SO-8 Single

• TrenchFET^®Gen IV power MOSFET

• SkyFET^®with monolithic Schottky diode

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

Top View

Bottom View

• Personal computers and servers

• Synchronous buck

PRODUCT SUMMARY

V_DS(V)

R_DS(on)max. (Ω) at V_GS= 10 V

_DS(on)max. (Ω) at V_GS= 4.5 V

Q_gtyp. (nC)

_D(A) ^{a, g}

Configuration

Schottky

Diode

• Synchronous rectification

0.0027

0.0040

17.5

• DC/DC conversion

N-Channel MOSFET

Single

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

SiRC06DP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

+20, -16

60 ^g

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

_C= 70 °C

T_A= 25 °C

T_A= 70 °C

60 ^g

Continuous drain current (T_J= 150 °C)

I_D

32 ^{b, c}

25.6 ^{b, c}

100

60 ^g

7.1 ^{b, c}

11.25

5 ^{b, c}

Pulsed drain current (t = 300 μs)

I_DM

I_S

T_C= 25 °C

Continuous source-drain diode current

T_A= 25 °C

L = 0.3 mH

T_C= 25 °C

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

T_C= 70 °C

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

3.2 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^b,f

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

t ≤ 10 s

Steady state

°C/W

Maximum junction-to-case (drain)

R_thJC

1.9

2.5

Notes

a. Based on T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 70 °C/W

g. Package limit

S21-0841-Rev. B, 09-Aug-2021

Document Number: 62942

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与SiRC06DP相关器件

型号	品牌	获取价格	描述	数据表
SiRC10DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET With Schottky Diode
SiRC16DP	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFET with Schottky Diode
SiRC18DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET With Schottky Diode
SiRFstar IV 4e	QUALCOMM	获取价格	Qualcomm? SiRFstar? IV GSD4e B03 WLCSP is a comprehensive navigation processor built on a
SiRFstar V 5e	QUALCOMM	获取价格	With support for multiple satellite systems and multiple frequency options, this chipset i
SiRFstar V 5ea	QUALCOMM	获取价格	Qualcomm? SiRFstar? V 5ea is automotive qualified and offers high performance in sensitivi
SiRS4300DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiRS4301DP	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SiRS4302DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiRS4400DP	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET

与SiRC06DP相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

28
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

21
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

50
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

48

产品中心

服务支持

精选活动

关于我们

帮助中心

SiRC06DP

SiRC06DP 数据手册

与SiRC06DP相关器件

与SiRC06DP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SiRC06DP

SiRC06DP 数据手册

与SiRC06DP相关器件

与SiRC06DP相关文章

您还可以找

您在本页遇到什么问题？