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SiRS4300DP PDF预览

SiRS4300DP

更新时间: 2024-11-26 17:01:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 192K
描述
N-Channel 30 V (D-S) MOSFET

SiRS4300DP 数据手册

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SiRS4300DP  
Vishay Siliconix  
www.vishay.com  
N-Channel 30 V (D-S) MOSFET  
FEATURES  
PowerPAK® SO-8S Single  
• TrenchFET® Gen IV power MOSFET  
• Very low RDS x Qg figure-of-merit (FOM)  
• 100 % Rg and UIS tested  
D
D
7
8
D
6
D
5
• Enhance power dissipation and lower RthJC  
• Leadership RDS(on) minimizes power loss from  
conduction  
1
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
S
S
3
S
4
G
D
APPLICATIONS  
Top View  
Bottom View  
• Synchronous rectification  
• DC/DC converters  
• OR-ing and hot swap switch  
PRODUCT SUMMARY  
VDS (V)  
30  
0.00040  
0.00068  
84  
RDS(on) max. () at VGS = 10 V  
G
• Battery management  
RDS(on) max. () at VGS = 4.5 V  
Qg typ. (nC)  
I
D (A) a  
680  
S
N-Channel MOSFET  
Configuration  
Single  
ORDERING INFORMATION  
Package  
PowerPAK SO-8S  
Lead (Pb)-free and halogen-free  
SiRS4300DP-T1-RE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-source voltage  
Gate-source voltage  
SYMBOL  
LIMIT  
30  
+20, -16  
680  
UNIT  
VDS  
VGS  
V
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
544  
Continuous drain current (TJ = 150 °C)  
ID  
117 b, c  
94 b, c  
800  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
252  
7.6 b, c  
77  
300  
278  
Continuous source-drain diode current  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
L = 0.1 mH  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
178  
Maximum power dissipation  
PD  
8.3 b, c  
5.3 b, c  
-55 to +150  
260  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
RthJC  
TYPICAL  
10  
0.30  
MAXIMUM  
15  
UNIT  
Maximum junction-to-ambient b, f  
t 10 s  
Steady state  
°C/W  
Maximum junction-to-case (drain)  
0.45  
Notes  
a. TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8S is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 45 °C/W  
S23-1158-Rev. A, 18-Dec-2023  
Document Number: 62413  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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