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SiRS5800DP PDF预览

SiRS5800DP

更新时间: 2024-11-22 14:50:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 232K
描述
N-Channel 80 V (D-S) MOSFET

SiRS5800DP 数据手册

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SiRS5800DP  
Vishay Siliconix  
www.vishay.com  
N-Channel 80 V (D-S) MOSFET  
FEATURES  
PowerPAK® SO-8S Single  
• TrenchFET® Gen V power MOSFET  
D
D
7
8
• Very low RDS x Qg figure-of-merit (FOM)  
• Leadership RDS(on) minimizes power loss from  
conduction  
D
6
D
5
• 100 % Rg and UIS tested  
• Enhance power dissipation and lower RthJC  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
1
S
2
3
S
4
S
G
D
APPLICATIONS  
Top View  
Bottom View  
• Synchronous rectification  
• DC/DC converters  
• OR-ing and hot swap switch  
• Power supplies  
• Motor drive control  
PRODUCT SUMMARY  
VDS (V)  
80  
0.0018  
0.0023  
61  
G
RDS(on) max. () at VGS = 10 V  
RDS(on) max. () at VGS = 7.5 V  
Qg typ. (nC)  
S
• Battery management  
I
D (A) a  
265  
N-Channel MOSFET  
Configuration  
Single  
ORDERING INFORMATION  
Package  
PowerPAK SO-8S  
Lead (Pb)-free and halogen-free  
SiRS5800DP-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-source voltage  
Gate-source voltage  
SYMBOL  
LIMIT  
80  
UNIT  
VDS  
V
VGS  
20  
TC = 25 °C  
C = 70 °C  
265  
212  
46 b, c  
37 b, c  
500  
T
Continuous drain current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
218  
6.7 b, c  
65  
Continuous source-drain diode current  
TA = 25 °C  
L = 0.1 mH  
TC = 25 °C  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
211  
240  
mJ  
W
T
C = 70 °C  
154  
Maximum power dissipation  
PD  
TA = 25 °C  
TA = 70 °C  
7.4 b, c  
4.7 b, c  
-55 to +150  
260  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
TYPICAL  
13  
MAXIMUM  
17  
UNIT  
Maximum junction-to-ambient b  
t 10 s  
Steady state  
°C/W  
Maximum junction-to-case (drain)  
RthJC  
0.4  
0.52  
Notes  
a. TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8S is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 52 °C/W  
S23-0033-Rev. A, 30-Jan-2023  
Document Number: 62191  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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