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SiRS4302DP PDF预览

SiRS4302DP

更新时间: 2024-11-22 14:52:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 232K
描述
N-Channel 30 V (D-S) MOSFET

SiRS4302DP 数据手册

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SiRS4302DP  
Vishay Siliconix  
www.vishay.com  
N-Channel 30 V (D-S) MOSFET  
FEATURES  
PowerPAK® SO-8S Single  
• TrenchFET® Gen IV power MOSFET  
• Very low RDS x Qg figure-of-merit (FOM)  
• 100 % Rg and UIS tested  
D
D
7
8
D
6
D
5
• Enhance power dissipation and lower RthJC  
• Material categorization: for definitions of  
compliance please see www.vishay.com/doc?99912  
1
2
S
S
D
APPLICATIONS  
3
4
G
S
• Synchronous rectification  
• DC/DC converters  
Top View  
Bottom View  
• OR-ing and hot swap switch  
• Battery management  
G
PRODUCT SUMMARY  
VDS (V)  
30  
0.00057  
0.00083  
73  
RDS(on) max. () at VGS = 10 V  
S
RDS(on) max. () at VGS = 4.5 V  
Qg typ. (nC)  
N-Channel MOSFET  
I
D (A) a  
478  
Configuration  
Single  
ORDERING INFORMATION  
Package  
PowerPAK SO-8S  
Lead (Pb)-free and halogen-free  
SiRS4302DP-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-source voltage  
Gate-source voltage  
SYMBOL  
LIMIT  
30  
UNIT  
VDS  
V
VGS  
+20, -16  
478  
382  
87 b, c  
70 b, c  
600  
TC = 25 °C  
C = 70 °C  
T
Continuous drain current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
189  
6.2 b, c  
65  
Continuous source-drain diode current  
TA = 25 °C  
L = 0.1 mH  
TC = 25 °C  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
211  
208  
133  
mJ  
W
TC = 70 °C  
Maximum power dissipation  
PD  
TA = 25 °C  
TA = 70 °C  
6.9 b, c  
4.4 b, c  
-55 to +150  
260  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
TYPICAL  
14  
MAXIMUM  
18  
UNIT  
Maximum junction-to-ambient b  
t 10 s  
Steady state  
°C/W  
Maximum junction-to-case (drain)  
RthJC  
0.46  
0.60  
Notes  
a. TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8S is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 55 °C/W  
S23-0400-Rev. B, 05-Jun-2023  
Document Number: 62190  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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