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SiRC10DP PDF预览

SiRC10DP

更新时间: 2024-11-26 14:55:23
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威世 - VISHAY /
页数 文件大小 规格书
9页 229K
描述
N-Channel 30 V (D-S) MOSFET With Schottky Diode

SiRC10DP 数据手册

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SiRC10DP  
Vishay Siliconix  
www.vishay.com  
N-Channel 30 V (D-S) MOSFET With Schottky Diode  
FEATURES  
PowerPAK® SO-8 Single  
• TrenchFET® Gen IV power MOSFET  
• SKYFET® with monolithic Schottky diode  
• 100 % Rg and UIS tested  
D
D
7
8
D
6
D
5
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
1
2
S
3
S
S
APPLICATIONS  
D
4
G
1
• Synchronous buck  
Top View  
Bottom View  
• Synchronous rectification  
Schottky  
Diode  
PRODUCT SUMMARY  
VDS (V)  
• DC/DC conversion  
G
30  
RDS(on) max. (Ω) at VGS = 10 V  
0.0035  
0.0052  
11.2  
60 a, g  
Single  
R
DS(on) max. (Ω) at VGS = 4.5 V  
Qg typ. (nC)  
D (A)  
Configuration  
S
N-Channel MOSFET  
I
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
PowerPAK SO-8 Single  
SiRC10DP-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
30  
+20 / -16  
60 a  
V
VGS  
TC = 25 °C  
C = 70 °C  
TA = 25 °C  
TA = 70 °C  
T
60 a  
Continuous drain current (TJ = 150 °C)  
ID  
23.9 b, c  
19.1 b, c  
150  
30  
3.2 b, c  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
Continuous source-drain diode current  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
15  
11.25  
43  
27.5  
3.6, c  
2.3 b, c  
-55 to +150  
260  
L = 0.1 mH  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Maximum power dissipation  
PD  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient b  
SYMBOL  
RthJA  
RthJC  
TYPICAL  
24  
MAXIMUM  
UNIT  
t 10 s  
Steady state  
34  
2.9  
°C/W  
Maximum junction-to-case (drain)  
2.3  
Notes  
a. Package limited.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 70 °C/W.  
g. TC = 25 °C.  
S21-0840-Rev. B, 09-Aug-2021  
Document Number: 75189  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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