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SiRC18DP PDF预览

SiRC18DP

更新时间: 2024-11-26 14:54:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 226K
描述
N-Channel 30 V (D-S) MOSFET With Schottky Diode

SiRC18DP 数据手册

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SiRC18DP  
Vishay Siliconix  
www.vishay.com  
N-Channel 30 V (D-S) MOSFET With Schottky Diode  
FEATURES  
• TrenchFET® Gen IV power MOSFET  
• SkyFET® with monolithic Schottky diode  
PowerPAK® SO-8 Single  
D
D
7
8
D
6
D
5
• Optimized RDS x Qg and RDS x Qgd FOM  
elevates efficiency for high-frequency switching  
• 100 % Rg and UIS tested  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
1
S
2
S
3
4
G
S
1
APPLICATIONS  
Top View  
Bottom View  
• Synchronous buck  
D
• Synchronous rectification  
• DC/DC conversion  
PRODUCT SUMMARY  
MOSFET  
V
DS (V)  
30  
0.00110  
0.00154  
35  
Schottky  
diode  
R
DS(on) max. (Ω) at VGS = 10 V  
DS(on) max. (Ω) at VGS = 4.5 V  
G
R
Qg typ. (nC)  
D (A) a, g  
I
60  
SCHOTTKY  
VF (V) at 10 A  
IF (A) a, g  
S
0.55  
60  
N-channel MOSFET  
Configuration  
Single plus integrated Schottky  
ORDERING INFORMATION  
Package  
PowerPAK SO-8  
Lead (Pb)-free and halogen-free  
SiRC18DP-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
30  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
+20, -16  
60 a  
60 a  
52 b, c  
42 b, c  
250  
T
C = 25 °C  
C = 70 °C  
T
Continuous drain current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
60 a  
5 a, b  
Continuous source current (MOSFET diode conduction)  
TA = 25 °C  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
30  
L = 0.1 mH  
EAS  
45  
mJ  
W
T
C = 25 °C  
C = 70 °C  
54.3  
T
34.7  
Maximum power dissipation  
PD  
TA = 25 °C  
TA = 70 °C  
5 b, c  
3.2 b, c  
-55 to +150  
260  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature)  
TJ, Tstg  
°C  
S21-0843-Rev. D, 09-Aug-2021  
Document Number: 76402  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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