Datasheet > SIHP5N50D

SIHP5N50D

更新时间： 2024-09-16 12:21:51

品牌	Logo	应用领域
威世 - VISHAY		/
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8页	218K
描述
D Series Power MOSFET

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SiHP5N50D

Vishay Siliconix

www.vishay.com

D Series Power MOSFET

FEATURES

PRODUCT SUMMARY

• Optimal Design

550

V_DS(V) at T_Jmax.

_DS(on)max. at 25 °C ()

Q_g(max.) (nC)

- Low Area Specific On-Resistance

- Low Input Capacitance (C_iss

V_GS= 10 V

1.5

)

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

- Avalanche Energy Rated (UIS)

• Optimal Efficiency and Operation

- Low Cost

_gs(nC)

_gd(nC)

Configuration

Single

- Simple Gate Drive Circuitry

- Low Figure-of-Merit (FOM): R_onx Q_g

- Fast Switching

TO-220AB

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Consumer Electronics

- Displays (LCD or Plasma TV)

• Server and Telecom Power Supplies

- SMPS

• Industrial

- Welding

N-Channel MOSFET

- Induction Heating

- Motor Drives

• Battery Chargers

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

SiHP5N50D-E3

Lead (Pb)-free and Halogen-free

SiHP5N50D-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

Gate-Source Voltage AC (f > 1 Hz)

V_DS

500

V_GS

5.3

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C=100 °C

3.4

Pulsed Drain Current^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy^b

0.83

W/°C

E_AS

P_D

Maximum Power Dissipation

104

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt ^(d)

T_J, T_stg

- 55 to + 150

°C

T_J= 125 °C

dV/dt

V/ns

°C

0.28

300

Soldering Recommendations (Peak Temperature)^c

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 2.3 mH, R_g= 25 , I_AS= 4.5 A.

c. 1.6 mm from case.

d. I_SD I_D, starting T_J= 25 °C.

S12-0690-Rev. A, 02-Apr-12

Document Number: 91489

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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