SiHS90N65E
Vishay Siliconix
www.vishay.com
E Series Power MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
D
• Low input capacitance (Ciss
)
SUPER-247
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
S
G
D
G
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
700
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
RDS(on) (Ω) typ. at 25 °C
VGS = 10 V
0.025
Qg (nC) max.
591
84
Q
gs (nC)
gd (nC)
- Welding
- Induction heating
- Motor drives
Q
160
Configuration
Single
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
Super-247
Lead (Pb)-free
SiHS90N65E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
Gate-source voltage
VDS
650
V
VGS
30
T
C = 25 °C
87
55
Continuous drain current (TJ = 150 °C)
VGS at 10 V
ID
TC = 100 °C
A
Pulsed drain current a
IDM
323
Linear derating factor
Single pulse avalanche energy b
5
W/°C
mJ
W
EAS
PD
1930
625
Maximum power dissipation
Operating junction and storage temperature range
Drain-source voltage slope
Reverse diode dV/dt d
TJ, Tstg
-55 to +150
41
°C
TJ = 125 °C
for 10 s
dV/dt
V/ns
°C
4.1
Soldering recommendations (peak temperature) c
300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 11.7 A
c. 1.6 mm from case
d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C
S21-0019-Rev. B, 18-Jan-2021
Document Number: 91585
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000