5秒后页面跳转
SiHS36N50D PDF预览

SiHS36N50D

更新时间: 2023-12-06 20:06:29
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 191K
描述
D Series Power MOSFET

SiHS36N50D 数据手册

 浏览型号SiHS36N50D的Datasheet PDF文件第2页浏览型号SiHS36N50D的Datasheet PDF文件第3页浏览型号SiHS36N50D的Datasheet PDF文件第4页浏览型号SiHS36N50D的Datasheet PDF文件第5页浏览型号SiHS36N50D的Datasheet PDF文件第6页浏览型号SiHS36N50D的Datasheet PDF文件第7页 
SiHS36N50D  
Vishay Siliconix  
www.vishay.com  
D Series Power MOSFET  
FEATURES  
• Optimal design  
- Low area specific on-resistance  
- Low input capacitance (Ciss  
D
Super-247  
)
- Reduced capacitive switching losses  
- High body diode ruggedness  
- Avalanche energy rated (UIS)  
• Optimal efficiency and operation  
- Low cost  
S
G
D
G
- Simple gate drive circuitry  
- Low figure-of-merit (FOM): Ron x Qg  
- Fast switching  
S
N-Channel MOSFET  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
550  
APPLICATIONS  
RDS(on) max. at 25 °C (Ω)  
VGS = 10 V  
0.130  
• Consumer electronics  
- Displays (LCD or Plasma TV  
• Server and telecom power supplies  
- SMPS  
Qg max. (nC)  
125  
23  
Q
gs (nC)  
gd (nC)  
Q
37  
Configuration  
Single  
• Industrial  
- Welding, induction heating, motor drives  
• Battery chargers  
ORDERING INFORMATION  
Package  
Super-247  
Lead (Pb)-free and halogen-free  
SiHS36N50D-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-source voltage  
VDS  
500  
V
Gate-source voltage  
30  
VGS  
Gate-source voltage AC (f > 1 Hz)  
30  
TC = 25 °C  
C = 100 °C  
36  
23  
Continuous drain current (TJ = 150 °C)  
VGS at 10 V  
ID  
T
A
Pulsed drain current a  
IDM  
112  
Linear derating factor  
Single pulse avalanche energy b  
3.6  
W/°C  
mJ  
W
EAS  
PD  
332  
Maximum power dissipation  
446  
Operating junction and storage temperature range  
Drain-source voltage slope  
Reverse diode dV/dt d  
TJ, Tstg  
- 55 to + 150  
24  
°C  
TJ = 125 °C  
dV/dt  
V/ns  
°C  
0.1  
300 c  
Soldering recommendations (peak temperature)  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature  
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 Ω, IAS = 17 A  
c. 1.6 mm from case  
d. ISD ID, starting TJ = 25 °C  
S21-0019-Rev. B, 18-Jan-2021  
Document Number: 91514  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SiHS36N50D相关器件

型号 品牌 描述 获取价格 数据表
SIHS36N50D-E3 VISHAY TRANSISTOR POWER, FET, FET General Purpose Power

获取价格

SiHS90N65E VISHAY E Series Power MOSFET

获取价格

SiHU2N80AE VISHAY E Series Power MOSFET

获取价格

SiHU2N80E VISHAY E Series Power MOSFET

获取价格

SIHU3N50D VISHAY D Series Power MOSFET

获取价格

SiHU3N50DA VISHAY D Series Power MOSFET

获取价格