SiHS36N50D
Vishay Siliconix
www.vishay.com
D Series Power MOSFET
FEATURES
• Optimal design
- Low area specific on-resistance
- Low input capacitance (Ciss
D
Super-247
)
- Reduced capacitive switching losses
- High body diode ruggedness
- Avalanche energy rated (UIS)
• Optimal efficiency and operation
- Low cost
S
G
D
G
- Simple gate drive circuitry
- Low figure-of-merit (FOM): Ron x Qg
- Fast switching
S
N-Channel MOSFET
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VDS (V) at TJ max.
550
APPLICATIONS
RDS(on) max. at 25 °C (Ω)
VGS = 10 V
0.130
• Consumer electronics
- Displays (LCD or Plasma TV
• Server and telecom power supplies
- SMPS
Qg max. (nC)
125
23
Q
gs (nC)
gd (nC)
Q
37
Configuration
Single
• Industrial
- Welding, induction heating, motor drives
• Battery chargers
ORDERING INFORMATION
Package
Super-247
Lead (Pb)-free and halogen-free
SiHS36N50D-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
VDS
500
V
Gate-source voltage
30
VGS
Gate-source voltage AC (f > 1 Hz)
30
TC = 25 °C
C = 100 °C
36
23
Continuous drain current (TJ = 150 °C)
VGS at 10 V
ID
T
A
Pulsed drain current a
IDM
112
Linear derating factor
Single pulse avalanche energy b
3.6
W/°C
mJ
W
EAS
PD
332
Maximum power dissipation
446
Operating junction and storage temperature range
Drain-source voltage slope
Reverse diode dV/dt d
TJ, Tstg
- 55 to + 150
24
°C
TJ = 125 °C
dV/dt
V/ns
°C
0.1
300 c
Soldering recommendations (peak temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 Ω, IAS = 17 A
c. 1.6 mm from case
d. ISD ≤ ID, starting TJ = 25 °C
S21-0019-Rev. B, 18-Jan-2021
Document Number: 91514
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000