5秒后页面跳转
SIHU7N60E PDF预览

SIHU7N60E

更新时间: 2024-09-23 12:25:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 180K
描述
E Series Power MOSFET

SIHU7N60E 数据手册

 浏览型号SIHU7N60E的Datasheet PDF文件第2页浏览型号SIHU7N60E的Datasheet PDF文件第3页浏览型号SIHU7N60E的Datasheet PDF文件第4页浏览型号SIHU7N60E的Datasheet PDF文件第5页浏览型号SIHU7N60E的Datasheet PDF文件第6页浏览型号SIHU7N60E的Datasheet PDF文件第7页 
SiHU7N60E  
Vishay Siliconix  
www.vishay.com  
E Series Power MOSFET  
FEATURES  
• Low Figure-of-Merit (FOM) Ron x Qg  
• Low Input Capacitance (Ciss  
• Reduced Switching and Conduction Losses  
• Ultra Low Gate Charge (Qg)  
• Avalanche Energy Rated (UIS)  
• Material categorization: For definitions of  
compliance please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
DS(on) max. at 25 °C ()  
Qg max. (nC)  
650  
)
R
VGS = 10 V  
0.6  
40  
5
Q
gs (nC)  
gd (nC)  
Q
9
Configuration  
Single  
APPLICATIONS  
• Server and Telecom Power Supplies  
• Switch Mode Power Supplies (SMPS)  
• Power Factor Correction Power Supplies (PFC)  
• Lighting  
D
IPAK  
(TO-251)  
D
- High-Intensity Discharge (HID)  
- Fluorescent Ballast Lighting  
• Industrial  
G
S
D
G
- Welding  
- Induction Heating  
- Motor Drives  
S
N-Channel MOSFET  
- Battery Chargers  
- Renewable Energy  
- Solar (PV Inverters)  
ORDERING INFORMATION  
Package  
IPAK (TO-251)  
Lead (Pb)-free and Halogen-free  
SiHU7N60E-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Drain-Source Voltage  
600  
VDS  
TC = - 25 °C, ID = 250 μA  
575  
V
Gate-Source Voltage  
20  
VGS  
Gate-Source Voltage AC (f > 1 Hz)  
30  
T
C = 25 °C  
7
Continuous Drain Current (TJ = 150 °C)  
VGS at 10 V  
ID  
TC = 100 °C  
5
A
Pulsed Drain Currenta  
IDM  
18  
Linear Derating Factor  
Single Pulse Avalanche Energyb  
0.63  
W/°C  
mJ  
W
EAS  
PD  
43  
Maximum Power Dissipation  
78  
Operating Junction and Storage Temperature Range  
Drain-Source Voltage Slope  
Reverse Diode dV/dtd  
TJ, Tstg  
- 55 to + 150  
°C  
TJ = 125 °C  
37  
3
300c  
dV/dt  
V/ns  
°C  
Soldering Recommendations (Peak Temperature)  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature.  
b. VDD = 50 V, starting TJ = 25 °C, L = 13.8 mH, Rg = 25 , IAS = 2.5 A.  
c. 1.6 mm from case.  
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.  
S12-3086-Rev. B, 24-Dec-12  
Document Number: 91511  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SIHU7N60E相关器件

型号 品牌 获取价格 描述 数据表
SIHVM12.5 SENSITRON

获取价格

Rectifier Diode, 1 Element, 0.5A, Silicon,
SIHVM15 SENSITRON

获取价格

Rectifier Diode, 1 Element, 0.5A, Silicon,
SIHVM5 SENSITRON

获取价格

Rectifier Diode, 1 Element, 0.5A, Silicon
SIHVM7.5 SENSITRON

获取价格

Rectifier Diode, 1 Element, 0.5A, Silicon,
SiHW21N80AE VISHAY

获取价格

E Series Power MOSFET
SIHW21N80AE-GE3 VISHAY

获取价格

Power Field-Effect Transistor,
SiHW30N60E VISHAY

获取价格

E Series Power MOSFET
SiHW33N60E VISHAY

获取价格

E Series Power MOSFET
SiHW47N60E VISHAY

获取价格

E Series Power MOSFET
SiHW47N60EF VISHAY

获取价格

EF Series Power MOSFET with Fast Body Diode