Datasheet > SIHU3N50DA-GE3

SIHU3N50DA-GE3

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	192K
描述
MOSFET N-CHANNEL 500V 3A IPAK

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SIHU3N50DA-GE3 数据手册

SiHU3N50DA

Vishay Siliconix

www.vishay.com

D Series Power MOSFET

FEATURES

PRODUCT SUMMARY

• Optimal design

V_DS(V) at T_Jmax.

_DS(on)max. at 25 °C (Ω)

Q_g(max.) (nC)

550

- Low area specific on-resistance

- Low input capacitance (C_iss

V_GS= 10 V

3.2

)

- Reduced capacitive switching losses

- High body diode ruggedness

- Avalanche energy rated (UIS)

• Optimal efficiency and operation

- Low cost

_gs(nC)

_gd(nC)

Configuration

Single

- Simple gate drive circuitry

- Low figure-of-merit (FOM): R_onx Q_g

- Fast switching

IPAK

(TO-251)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

N-Channel MOSFET

• Consumer electronics

- Displays (LCD or plasma TV)

• Server and telecom power supplies

- SMPS

• Industrial

- Welding, induction heating, motor drives

• Battery chargers

ORDERING INFORMATION

Package

IPAK (TO-251)

Lead (Pb)-free and Halogen-free

SiHU3N50DA-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

Gate-Source Voltage AC (f > 1 Hz)

V_DS

500

V_GS

3.0

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

1.9

Pulsed Drain Current^a

I_DM

5.5

Linear Derating Factor

Single Pulse Avalanche Energy^b

0.56

W/°C

E_AS

P_D

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt^d

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

for 10 s

dV/dt

V/ns

°C

0.22

300

Soldering Recommendations (Peak Temperature)^c

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 2.3 mH, R_g= 25 Ω, I_AS= 2.8 A.

c. 1.6 mm from case.

d. I_SD≤ I_D, starting T_J= 25 °C.

S14-1304-Rev. A, 23-Jun-14

Document Number: 91615

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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