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SIHG47N60E-GE3

更新时间: 2024-01-21 22:55:03
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 185K
描述
E Series Power MOSFET

SIHG47N60E-GE3 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
Factory Lead Time:12 weeks风险等级:1.4
Is Samacsys:N雪崩能效等级(Eas):1800 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):47 A
最大漏极电流 (ID):47 A最大漏源导通电阻:0.064 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):357 W最大脉冲漏极电流 (IDM):145 A
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SIHG47N60E-GE3 数据手册

 浏览型号SIHG47N60E-GE3的Datasheet PDF文件第2页浏览型号SIHG47N60E-GE3的Datasheet PDF文件第3页浏览型号SIHG47N60E-GE3的Datasheet PDF文件第4页浏览型号SIHG47N60E-GE3的Datasheet PDF文件第5页浏览型号SIHG47N60E-GE3的Datasheet PDF文件第6页浏览型号SIHG47N60E-GE3的Datasheet PDF文件第7页 
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Document Number: 91000  
Revision: 11-Mar-11  
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