Datasheet > SiHG40N60E

SiHG40N60E

更新时间： 2023-12-06 20:00:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	470K
描述
E Series Power MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHG40N60E 数据手册

SiHG40N60E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

PRODUCT SUMMARY

• Low figure-of-merit (FOM) R_onx Q_g

• Low input capacitance (C_iss

V_DS(V) at T_Jmax.

_DS(on)typ. () at 25 °C

Q_gmax. (nC)

650

)

V_GS= 10 V

0.065

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

197

_gs(nC)

_gd(nC)

• Avalanche energy rated (UIS)

Configuration

Single

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

TO-247AC

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

N-Channel MOSFET

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free and Halogen-free

SiHG40N60E-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current ^a

I_DM

123

Linear Derating Factor

Single Pulse Avalanche Energy ^b

2.63

691

W/°C

E_AS

P_D

Maximum Power Dissipation

329

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt ^d

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

for 10 s

dV/dt

V/ns

°C

4.5

Soldering Recommendations (Peak temperature) ^c

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 140 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 7 A.

c. 1.6 mm from case.

d. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C.

S16-0659-Rev. A, 18-Apr-16

Document Number: 91802

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

下载PDF

与SiHG40N60E相关器件

型号	品牌	描述	获取价格	数据表
SiHG44N65EF	VISHAY	E Series Power MOSFET with Fast Body Diode	获取价格
SiHG460B	VISHAY	D Series Power MOSFET	获取价格
SiHG460B-GE3	VISHAY	D Series Power MOSFET	获取价格
SiHG47N60AE	VISHAY	E Series Power MOSFET	获取价格
SiHG47N60AEF	VISHAY	EF Series Power MOSFET With Fast Body Diode	获取价格
SIHG47N60AE-GE3	VISHAY	Power Field-Effect Transistor,	获取价格