Datasheet > SIHFU9220-E3

SIHFU9220-E3

更新时间： 2024-11-21 12:46:59

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
7页	4558K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIHFU9220-E3 数据手册

IRFR9220, IRFU9220, SiHFR9220, SiHFU9220

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

- 200

Available

• Repetitive Avalanche Rated

R_DS(on)(Ω)

V_GS= - 10 V

1.5

RoHS*

• Surface Mount (IRFR9220/SiHFR9220)

• Straight Lead (IRFUFU9220/SiHFU9220)

• Available in Tape and Reel

• P-Channel

Q_g(Max.) (nC)

3.3

COMPLIANT

_gs(nC)

_gd(nC)

Configuration

Single

• Fast Switching

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third Power MOSFETs technology is the key to Vishay

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of the Power MOSFETs

design achieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

P-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9220PbF

SiHFR9220-E3

IRFR9220

DPAK (TO-252)

IIRFR9220TRLPbF^a

SiHFR9220TL-E3^a

IRFR9220TRL^a

DPAK (TO-252)

IRFR9220TRRPbF^a

SiHFR9220TR-E3^a

IRFR9220TRR^a

SiHFR9220TR^a

DPAK (TO-252)

IRFR9220TRPbF^a

SiHFR9220T-E3^a

IRFR9220TR^a

IPAK (TO-251)

IRFU9220PbF

SiHFU9220-E3

IRFU9220

Lead (Pb)-free

SnPb

SiHFR9220

SiHFR9220TL^a

SiHFR9220T^a

SiHFU9220

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

- 200

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

- 3.6

- 2.3

- 14

0.33

0.020

310

Continuous Drain Current

V_GSat - 10 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

- 3.6

4.2

Repetitive Avalanche Energy^a

E_AR

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

2.5

dV/dt

- 5.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

260^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 50 V, Starting T_J= 25 °C, L = 35 mH, R_G= 25 Ω, I_AS= - 3.6 A (see fig. 12).

c. I_SD≤ - 3.9 A, dI/dt ≤ 95 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

www.kersemi.com

12 3 4 5 6 7

中文翻译

下载PDF

与SIHFU9220-E3相关器件

型号	品牌	获取价格	描述	数据表
SIHFU9310	KERSEMI	获取价格	Power MOSFET
SIHFU9310	VISHAY	获取价格	Power MOSFET
SIHFU9310-E3	KERSEMI	获取价格	Power MOSFET
SIHFU9310-E3	VISHAY	获取价格	Power MOSFET
SIHFUC20	KERSEMI	获取价格	Power MOSFET
SIHFUC20	VISHAY	获取价格	Power MOSFET
SIHFUC20-E3	KERSEMI	获取价格	Power MOSFET
SIHFUC20-E3	VISHAY	获取价格	Power MOSFET
SIHFUC20-GE3	VISHAY	获取价格	TRANSISTOR 2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, HALOGEN FREE AND ROH
SIHFZ10	VISHAY	获取价格	Power MOSFET

与SIHFU9220-E3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

28
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

21
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

50
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

48

产品中心

服务支持

精选活动

关于我们

帮助中心

SIHFU9220-E3

SIHFU9220-E3 数据手册

与SIHFU9220-E3相关器件

与SIHFU9220-E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SIHFU9220-E3

SIHFU9220-E3 数据手册

与SIHFU9220-E3相关器件

与SIHFU9220-E3相关文章

您还可以找

您在本页遇到什么问题？