Datasheet > SIHFZ14STRL-GE3

SIHFZ14STRL-GE3

更新时间： 2024-11-22 01:22:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	304K
描述
Power MOSFET

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SIHFZ14STRL-GE3 数据手册

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

• Advanced Process Technology

R_DS(on)()

V_GS= 10 V

0.20

• Surface Mount (IRFZ14S, SiHFZ14S)

• Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)

• 175 °C Operating Temperature

• Fast Switching

• Compliant to RoHS Directive 2002/95/EC

Q_g(Max.) (nC)

3.1

_gs(nC)

_gd(nC)

5.8

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extermely low

D²PAK (TO-263)

I²PAK (TO-262)

on resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extermely efficient reliabel deviece for use in a wide

variety of applications.

The D²PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and lowest possible on-resistance

in any existing surface mount package. The D²PAK is

suitable for high current applications because of its low

internal connection resistance and can dissipate up to 2.0 W

in a typical surface mount application.

N-Channel MOSFET

The through-hole version (IRFZ14L, SiHFZ44L) is available

for low profile applications.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

D²PAK (TO-263)

SiHFZ14S-GE3

IRFZ14SPbF

D²PAK (TO-263)

SiHFZ14STRL-GE3^a

IRFZ14STRLPbF^a

SiHFZ14STL-E3^a

I²PAK (TO-262)

SiHFZ14L-GE3

IRFZ14LPbF

Lead (Pb)-free

SiHFZ14S-E3

SiHFZ14L-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

V_DS

LIMIT

UNIT

V_GS

_C= 25 °C

7.2

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

0.29

3.7

4.5

W/°C

E_AS

P_D

T_C= 25 °C

T_A= 25 °C

V/ns

°C

dV/dt

T_J, T_stg

- 55 to + 175

300^d

for 10 s

Notes

b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

c. V_DD= 25 V, starting T_J= 25 °C, L = 548 μH, R_g= 25 , I_AS= 10 A (see fig. 12).

d. I_SD 10 A, dI/dt  90 A/μs, V_DD V_DS, T_J 175 °C.

e. 1.6 mm from case.

f. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90365

S11-1063-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SIHFZ14STRL-GE3相关器件

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SIHFZ24L	VISHAY	获取价格	TRANSISTOR 17 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3, F
SIHFZ24L-E3	VISHAY	获取价格	Power MOSFET
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SIHFZ24S-E3	VISHAY	获取价格	Power MOSFET

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