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SIHFU014 PDF预览

SIHFU014

更新时间: 2024-11-21 06:11:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 1768K
描述
Power MOSFET

SIHFU014 数据手册

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IRFR014, IRFU014, SiHFR014, SiHFU014  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
60  
Available  
• Surface Mount (IRFR014/SiHFR014)  
• Straight Lead (IRFU014/SiHFU014)  
• Available in Tape and Reel  
• Fast Switching  
R
DS(on) (Ω)  
VGS = 10 V  
0.20  
RoHS*  
Qg (Max.) (nC)  
11  
3.1  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
5.8  
Configuration  
Single  
• Ease of Paralleling  
D
• Simple Drive Requirements  
• Lead (Pb)-free Available  
DPAK  
IPAK  
(TO-252)  
(TO-251)  
G
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
S
N-Channel MOSFET  
The DPAK is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques. The straight  
lead version (IRFU/SiHFU series) is for through-hole  
mounting applications. Power dissipation levels up to 1.5 W  
are possible in typical surface mount applications.  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
DPAK (TO-252)  
DPAK (TO-252)  
IRFR014TRPbFa  
SiHFR014T-E3a  
IRFR014TRa  
IPAK (TO-251)  
IRFU014PbF  
SiHFU014-E3  
IRFU014  
IRFR014PbF  
SiHFR014-E3  
IRFR014  
IRFR014TRLPbFa  
SiHFR014TL-E3a  
IRFR014TRLa  
Lead (Pb)-free  
SnPb  
SiHFR014  
SiHFR014TLa  
SiHFR014Ta  
SiHFU014  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
60  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
TC = 25 °C  
TC =100°C  
7.7  
4.9  
Continuous Drain Current  
VGS at 10 V  
ID  
A
Pulsed Drain Currenta  
IDM  
31  
Linear Derating Factor  
0.20  
0.020  
47  
W/°C  
mJ  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
EAS  
PD  
T
C = 25 °C  
25  
W
TA = 25 °C  
2.5  
dV/dt  
4.5  
V/ns  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91263  
S-81432-Rev. A, 07-Jul-08  
www.vishay.com  
1

SIHFU014 替代型号

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