5秒后页面跳转
SIHFU024 PDF预览

SIHFU024

更新时间: 2024-11-21 12:46:59
品牌 Logo 应用领域
科盛美 - KERSEMI /
页数 文件大小 规格书
7页 4502K
描述
Power MOSFET

SIHFU024 数据手册

 浏览型号SIHFU024的Datasheet PDF文件第2页浏览型号SIHFU024的Datasheet PDF文件第3页浏览型号SIHFU024的Datasheet PDF文件第4页浏览型号SIHFU024的Datasheet PDF文件第5页浏览型号SIHFU024的Datasheet PDF文件第6页浏览型号SIHFU024的Datasheet PDF文件第7页 
IRFR024, IRFU024, SiHFR024, SiHFU024  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
60  
Available  
• Surface Mount (IRFR024/SiHFR024)  
0.10  
RDS(on) (Ω)  
VGS = 10 V  
RoHS*  
• Straight Lead (IRFU024/SiHFU024)  
COMPLIANT  
Qg (Max.) (nC)  
25  
5.8  
• Available in Tape and Reel  
• Fast Switching  
Q
gs (nC)  
Qgd (nC)  
11  
Configuration  
Single  
• Ease of Paralleling  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
D
DPAK  
IPAK  
(TO-252)  
(TO-251)  
DESCRIPTION  
G
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
The DPAK is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques. The straight  
lead version (IRFU/SiHFU series) is for through-hole  
mounting applications. Power dissipation levels up to 1.5 W  
are possible in typical surface mount applications.  
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
DPAK (TO-252)  
DPAK (TO-252)  
IPAK (TO-251)  
IRFU024PbF  
SiHFU024-E3  
IRFU024  
IRFR024PbF  
SiHFR024-E3  
IRFR024  
IRFR024TRPbFa  
SiHFR024T-E3a  
IRFR024TRa  
-
Lead (Pb)-free  
-
IRFR024TRLa  
SiHFR024TLa  
SnPb  
SiHFR024  
SiHFR024Ta  
SiHFU024  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
60  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
TC = 25 °C  
TC =100°C  
14  
9.0  
Continuous Drain Current  
VGS at 10 V  
ID  
A
Pulsed Drain Currenta  
IDM  
56  
Linear Derating Factor  
0.33  
0.020  
91  
W/°C  
mJ  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
EAS  
PD  
TC = 25 °C  
TA = 25 °C  
42  
W
2.5  
dV/dt  
5.5  
V/ns  
www.kersemi.com  
1

与SIHFU024相关器件

型号 品牌 获取价格 描述 数据表
SIHFU024-E3 KERSEMI

获取价格

Power MOSFET
SIHFU024-E3 VISHAY

获取价格

Power MOSFET
SIHFU024-GE3 VISHAY

获取价格

Power MOSFET
SIHFU110 KERSEMI

获取价格

Dynamic dV/dt Rating Repetitive Avalanche Rated
SIHFU110 VISHAY

获取价格

Power MOSFET
SIHFU110-E3 VISHAY

获取价格

Power MOSFET
SIHFU110-E3 KERSEMI

获取价格

Dynamic dV/dt Rating Repetitive Avalanche Rated
SIHFU120 KERSEMI

获取价格

Power MOSFET
SIHFU120 VISHAY

获取价格

IRFR120
SIHFU120-E3 VISHAY

获取价格

IRFR120