IRFR214, IRFU214, SiHFR214, SiHFU214
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR214, SiHFR214)
• Straight Lead (IRFU214, SiHFU214)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VDS (V)
DS(on) ()
Qg (Max.) (nC)
250
R
VGS = 10 V
2.0
8.2
1.8
Q
gs (nC)
gd (nC)
Q
4.5
Configuration
Single
D
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
DPAK
(TO-252)
IPAK
(TO-251)
D
DESCRIPTION
D
G
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
S
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252) DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IPAK (TO-251)
SiHFU214-GE3
IRFU214PbF
SiHFU214-E3
IRFU214
Lead (Pb)-free and Halogen-free
SiHFR214-GE3 SiHFR214TRL-GE3
SiHFR214TR-GE3 SiHFR214TRR-GE3
IRFR214PbF
SiHFR214-E3
IRFR214
IRFR214TRLPbFa
SiHFR214TL-E3a
IRFR214TRPbFa
SiHFR214T-E3a
IRFR214TRa
-
Lead (Pb)-free
SnPb
-
-
-
IRFR214TRRa
SiHFR214TRa
SiHFR214
SiHFR214Ta
SiHFU214
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
250
20
V
TC = 25 °C
C = 100 °C
2.2
Continuous Drain Current
VGS at 10 V
ID
T
1.4
A
Pulsed Drain Currenta
IDM
8.8
Linear Derating Factor
0.20
0.020
190
W/°C
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
EAS
IAR
mJ
A
2.2
Repetitive Avalanche Energya
EAR
2.5
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
25
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
PD
2.5
W
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
4.8
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 150
260d
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, Starting TJ = 25 °C, L = 62 mH, Rg = 25 , IAS = 2.2 A (see fig. 12).
c. ISD 2.2 A, dI/dt 65 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 Material).
S12-1426-Rev. D, 18-Jun-12
Document Number: 91269
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000