Datasheet > SIHFU020-GE3

SIHFU020-GE3

更新时间： 2024-11-21 12:14:51

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲
页数	文件大小	规格书
9页	4371K
描述
Power MOSFET

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数据手册

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SIHFU020-GE3 数据手册

IRFR020, IRFU020, SiHFR020, SiHFU020

Power MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

PRODUCT SUMMARY

V_DS(V)

R_DS(on)(Ω)

V_GS= 10 V

0.10

• Dynamic dV/dt Rating

Q_g(Max.) (nC)

5.8

• Surface Mount (IRFR020, SiHFR020)

• Available in Tape and Reel

• Fast Switching

_gs(nC)

Q_gd(nC)

• Ease of Paralleling

Configuration

Single

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DPAK

IPAK

(TO-252)

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

SiHFR020-GE3

IRFR020PbF

SiHFR020-E3

IRFR020

DPAK (TO-252)

SiHFR020TR-GE3

IRFR020TRPbF^a

SiHFR020T-E3^a

IRFR020TR^a

IPAK (TO-251)

SiHFU020-GE3

IRFU020PbF

SiHFU020-E3

IRFU020

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

SnPb

SiHFR020

SiHFR020T^a

SiHFU020

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

9.0

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.33

0.020

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

E_AS

P_D

T_C= 25 °C

T_A= 25 °C

2.5

dV/dt

5.5

V/ns

°C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

260^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 541 μH, R_g= 25 Ω, I_AS= 14 A (see fig. 12).

c. I_SD≤ 17 A, dI/dt ≤ 110 A/μs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

www.kersemi.com

12 3 4 5 6 7...9

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