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SIHFBC20L-GE3 PDF预览

SIHFBC20L-GE3

更新时间： 2024-10-15 15:51:15
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 291K
描述
TRANSISTOR 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power

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SIHFBC20L-GE3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TO-262AA
包装说明：IN-LINE, R-PSIP-T3针数：3
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.1其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：84 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：600 V最大漏极电流 (Abs) (ID)：2.2 A
最大漏极电流 (ID)：2.2 A最大漏源导通电阻：4.4 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-262AA
JESD-30 代码：R-PSIP-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：50 W最大脉冲漏极电流 (IDM)：8 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SIHFBC20L-GE3 数据手册

 浏览型号SIHFBC20L-GE3的Datasheet PDF文件第2页浏览型号SIHFBC20L-GE3的Datasheet PDF文件第3页浏览型号SIHFBC20L-GE3的Datasheet PDF文件第4页浏览型号SIHFBC20L-GE3的Datasheet PDF文件第5页浏览型号SIHFBC20L-GE3的Datasheet PDF文件第6页浏览型号SIHFBC20L-GE3的Datasheet PDF文件第7页 
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Halogen-free According to IEC 61249-2-21  
Definition  
600  
• Surface Mount (IRFBC20S, SiHFBC20S)  
RDS(on) ()  
VGS = 10 V  
4.4  
•
Low-Profile Through-Hole (IRFBC20L, SiHFBC20L)  
• Available in Tape and Reel (IRFBC20, SiiHFBC20S)  
• Dynamic dV/dt Rating  
• 150 °C Operating Temperature  
• Fast Switching  
• Fully Avalanche Rated  
Qg (Max.) (nC)  
18  
3.0  
Q
Q
gs (nC)  
gd (nC)  
8.9  
Configuration  
Single  
• Compliant to RoHS Directive 2002/95/EC  
DESCRIPTION  
D
D2PAK (TO-263)  
I2PAK (TO-262)  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
The D2PAK is a surface mount power package capable of  
the accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The  
D2PAK is suitable for high current applications because of  
its low internal connection resistance and can dissipate up  
to 2.0 W in a typical surface mount application. The  
through-hole version (IRFBC20L, SiHFBC20L) is a available  
for low-profile applications.  
G
G
D
S
D
S
G
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
SiHFBC20S-GE3  
IRFBC20SPbF  
SiHFBC20S-E3  
D2PAK (TO-263)  
I2PAK (TO-262)  
SiHFBC20L-GE3  
IRFBC20LPbF  
SiHFBC20L-E3  
Lead (Pb)-free and Halogen-free  
SiHFBC20STRL-GE3a  
IRFBC20STRLPbFa  
SiHFBC20STL-E3a  
Lead (Pb)-free  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
VDS  
LIMIT  
600  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
T
C = 25 °C  
2.2  
1.4  
8.0  
0.40  
84  
Continuous Drain Currente  
VGS at 10 V  
ID  
TC = 100 °C  
A
Pulsed Drain Currenta, e  
Linear Derating Factor  
Single Pulse Avalanche Energyb, e  
Avalanche Currenta  
IDM  
W/°C  
mJ  
A
EAS  
IAR  
2.2  
5.0  
3.1  
50  
Repetiitive Avalanche Energya  
EAR  
mJ  
TA = 25 °C  
Maximum Power Dissipation  
Peak Diode Recovery dV/dtc, e  
PD  
W
V/ns  
°C  
TC = 25 °C  
dV/dt  
3.0  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 31 mH, Rg = 25 , IAS = 2.2 A (see fig. 12).  
c. ISD 2.2 A, dI/dt 40 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. Uses IRFBC20, SiHFBC20 data and test conditions.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91107  
S11-1052-Rev. C, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...10

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