5秒后页面跳转
SIHFBC40 PDF预览

SIHFBC40

更新时间: 2024-11-24 12:34:51
品牌 Logo 应用领域
科盛美 - KERSEMI 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 2988K
描述
Power MOSFET

SIHFBC40 数据手册

 浏览型号SIHFBC40的Datasheet PDF文件第2页浏览型号SIHFBC40的Datasheet PDF文件第3页浏览型号SIHFBC40的Datasheet PDF文件第4页浏览型号SIHFBC40的Datasheet PDF文件第5页浏览型号SIHFBC40的Datasheet PDF文件第6页浏览型号SIHFBC40的Datasheet PDF文件第7页 
IRFBC40, SiHFBC40  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
600  
Available  
• Repetitive Avalanche Rated  
RDS(on) (Ω)  
VGS = 10 V  
1.2  
RoHS*  
• Fast Switching  
Qg (Max.) (nC)  
60  
8.3  
COMPLIANT  
• Ease of Paralleling  
Q
Q
gs (nC)  
gd (nC)  
30  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
Configuration  
Single  
D
DESCRIPTION  
TO-220  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
S
D
G
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
TO-220  
IRFBC40PbF  
SiHFBC40-E3  
IRFBC40  
Lead (Pb)-free  
SnPb  
SiHFBC40  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
600  
20  
V
VGS  
TC = 25 °C  
TC =100°C  
6.2  
Continuous Drain Current  
VGS at 10 V  
ID  
3.9  
A
Pulsed Drain Currenta  
IDM  
25  
Linear Derating Factor  
1.0  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
570  
6.2  
EAR  
13  
mJ  
W
Maximum Power Dissipation  
Peak Diode Recovery dV/dtc  
TC = 25 °C  
PD  
125  
3.0  
dV/dt  
TJ, Tstg  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
10  
°C  
for 10 s  
lbf · in  
N · m  
Mounting Torque  
6-32 or M3 screw  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 27 mH, RG = 25 Ω, IAS = 6.2 A (see fig. 12).  
c. ISD 6.2 A, dI/dt 80 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
www.kersemi.com  
1

与SIHFBC40相关器件

型号 品牌 获取价格 描述 数据表
SIHFBC40A-E3 VISHAY

获取价格

TRANSISTOR 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT,
SIHFBC40AS VISHAY

获取价格

Power MOSFET
SIHFBC40AS-E3 VISHAY

获取价格

Power MOSFET
SIHFBC40ASTL VISHAY

获取价格

Power MOSFET
SIHFBC40ASTL-E3 VISHAY

获取价格

Power MOSFET
SIHFBC40ASTR VISHAY

获取价格

Power MOSFET
SIHFBC40ASTR-E3 VISHAY

获取价格

Power MOSFET
SIHFBC40-E3 VISHAY

获取价格

Power MOSFET
SIHFBC40-E3 KERSEMI

获取价格

Power MOSFET
SIHFBC40L VISHAY

获取价格

Power MOSFET