Datasheet > SIHFBC40STRL-GE3A

SIHFBC40STRL-GE3A

更新时间： 2024-11-25 02:52:07

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威世 - VISHAY		/
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Power MOSFET

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SIHFBC40STRL-GE3A 数据手册

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IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

600

• Surface Mount (IRFBC40S, SiHFBC40S)

R_DS(on)()

V_GS= 10 V

1.2

•

Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)

Available in Tape and Reel (IRFBC40S, SiHFBC40S)

Q_g(Max.) (nC)

8.3

_gs(nC)

_gd(nC)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

Configuration

Single

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

D²PAK (TO-263)

I²PAK (TO-262)

The D²PAK is a surface mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application. The

through-hole version (IRFBC40L, SiHFBC40L) is available

for low-profile applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free SiHFBC40S-GE3

D²PAK (TO-263)

I²PAK (TO-262)

SiHFBC40L-GE3

IRFBC40LPbF

SiHFBC40L-E3

SiHFBC40STRL-GE3^a

IRFBC40STRLPbF^a

SiHFBC40STL-E3^a

IRFBC40SPbF

SiHFBC40S-E3

Lead (Pb)-free

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage^e

Gate-Source Voltage^e

V_DS

V_GS

600

T_C= 25 °C

_C= 100 °C

6.2

3.9

1.0

570

Continuous Drain Current

V_GSat 10 V

I_D

Pulsed Drain Current^a,e

Linear Derating Factor

Single Pulse Avalanche Energy^{b, e}

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

I_DM

W/°C

E_AS

I_AR

E_AR

6.2

T_C= 25 °C

T_A= 25 °C

130

3.1

3.0

Maximum Power Dissipation

P_D

V/ns

°C

Peak Diode Recovery dV/dt^{c, e}

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

dV/dt

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V; starting T_J= 25 °C, L = 27 mH, R_g= 25 , I_AS= 6.2 A (see fig. 12).

c. I_SD 6.2 A, dI/dt  80 A/μs, V_DD V_DS, T_J 150 °C.

d. 1.6 mm from case.

e. Uses IRFBC40, SiHFBC40 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91116

S11-1053-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

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