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SIHFBF20L PDF预览

SIHFBF20L

更新时间: 2024-11-24 06:11:39
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 941K
描述
Power MOSFET

SIHFBF20L 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.1Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):180 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:900 V
最大漏极电流 (Abs) (ID):1.7 A最大漏极电流 (ID):1.7 A
最大漏源导通电阻:8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):240极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):54 W最大脉冲漏极电流 (IDM):6.8 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SIHFBF20L 数据手册

 浏览型号SIHFBF20L的Datasheet PDF文件第2页浏览型号SIHFBF20L的Datasheet PDF文件第3页浏览型号SIHFBF20L的Datasheet PDF文件第4页浏览型号SIHFBF20L的Datasheet PDF文件第5页浏览型号SIHFBF20L的Datasheet PDF文件第6页浏览型号SIHFBF20L的Datasheet PDF文件第7页 
IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Surface Mount (IRFBF20S/SiHFBF20S)  
PRODUCT SUMMARY  
VDS (V)  
900  
Available  
• Low-Profile Through-Hole (IRFBF20L/SiHFBF20L)  
RDS(on) (Ω)  
VGS = 10 V  
8.0  
RoHS*  
Reel  
COMPLIANT  
• Available  
in  
Tape  
and  
Qg (Max.) (nC)  
38  
4.7  
(IRFBF20S/SiHFBF20S)  
• Dynamic dV/dt Rating  
• 150 °C Operating Temperature  
• Fast Switching  
Q
Q
gs (nC)  
gd (nC)  
21  
Configuration  
Single  
D
• Fully Avalanche Rated  
• Lead (Pb)-free Available  
D2PAK (TO-263)  
I2PAK (TO-262)  
DESCRIPTION  
Third generation Power MOSFETs form Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
The D2PAK is a surface mount power package capabel of  
the accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The  
D2PAK is suitable for high current applications because of its  
low internal connection resistance and can dissipate up to  
G
G
D
S
S
N-Channel MOSFET  
2.0  
W in a typical surface mount application. The  
through-hole version (IRFBF20L/SiHFBF20L) is available for  
low-profile applications.  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
IRFBF20SPbF  
SiHFBF20S-E3  
IRFBF20S  
D2PAK (TO-263)  
IRFBF20STRLPbFa  
SiHFBF20STL-E3a  
IRFBF20STRLa  
D2PAK (TO-263)  
IRFBF20STRRPbFa  
SiHFBF20STR-E3a  
IRFBF20STRRa  
SiHFBF20STRa  
I2PAK (TO-262)  
IRFBF20LPbF  
SiHFBF20L-E3  
IRFBF20L  
Lead (Pb)-free  
SnPb  
SiHFBF20S-E3  
SiHFBF20STLa  
SiHFBF20L  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltagee  
Gate-Source Voltagee  
VDS  
900  
20  
V
VGS  
T
C = 25 °C  
1.7  
1.1  
6.8  
0.43  
180  
1.7  
5.4  
54  
Continuous Drain Current  
VGS at 10 V  
ID  
TC = 100 °C  
A
Pulsed Drain Currenta,e  
IDM  
Linear Derating Factor  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb, e  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
EAR  
mJ  
T
C = 25 °C  
Maximum Power Dissipation  
Peak Diode Recovery dV/dtc, e  
PD  
W
TA = 25 °C  
3.1  
1.5  
dV/dt  
V/ns  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91121  
S-Pending-Rev. A, 23-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

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