Datasheet > SIHFBC30S-GE3

SIHFBC30S-GE3

更新时间： 2024-11-24 19:43:43

品牌	Logo	应用领域
威世 - VISHAY		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	290K
描述
TRANSISTOR 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

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SIHFBC30S-GE3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	D2PAK
包装说明：	SMALL OUTLINE, R-PSSO-G2	针数：	4
Reach Compliance Code：	unknown	HTS代码：	8541.29.00.95
风险等级：	5.06	其他特性：	AVALANCHE RATED
雪崩能效等级（Eas）：	290 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	600 V
最大漏极电流 (Abs) (ID)：	3.6 A	最大漏极电流 (ID)：	3.6 A
最大漏源导通电阻：	2.2 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	74 W
最大脉冲漏极电流 (IDM)：	14 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	40	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

SIHFBC30S-GE3 数据手册

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

600

• Surface Mount (IRFBC30S, SiHFBC30S)

• Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)

R_DS(on)()

V_GS= 10 V

2.2

Q_g(Max.) (nC)

4.6

•

Available in Tape and Reel (IRFBC30S, SiHFBC30S)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

_gs(nC)

_gd(nC)

Configuration

Single

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

D²PAK (TO-263)

I²PAK (TO-262)

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK is a surface mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application. The

through-hole version (IRFBC30L, SiHFBC30L) is a available

for low-profile applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

D²PAK (TO-263)

SiHFBC30S-GE3

IRFBC30SPbF

SiHFBC30S-E3

D²PAK (TO-263)

I²PAK (TO-262)

SiHFBC30L-GE3

IRFBC30LPbF

SiHFBC30L-E3

SiHFBC30STRL-GE3^a

IRFBC30STRLPbF^a

SiHFBC30STL-E3^a

Lead (Pb)-free

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

LIMIT

600

UNIT

V_DS

V_GS

3.6

2.3

0.59

290

3.6

7.4

3.1

T_C= 25 °C

T_C= 100 °C

Continuous Drain Current^e

V_GSat 10 V

I_D

Pulsed Drain Current^{a, e}

Linear Derating Factor

Single Pulse Avalanche Energy^{b, e}

Avalanche Current^a

Repetiitive Avalanche Energy^a

I_DM

W/°C

E_AS

I_AR

E_AR

T_A= 25 °C

_C= 25 °C

Maximum Power Dissipation

V/ns

°C

P_D

Peak Diode Recovery dV/dt^{c, e}

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

dV/dt

3.0

- 55 to + 150

300^d

T_J, T_stg

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 41 mH, R_g= 25 , I_AS= 3.6 A (see fig. 12).

c. I_SD 3.6 A, dI/dt  60 A/μs, V_DD V_DS, T_J 150 °C.

d. 1.6 mm from case.

e. Uses IRFBC30, SiHFBC30 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91111

S11-1053-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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与SIHFBC30S-GE3相关器件

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