SIHFBC20S

更新时间： 2024-10-15 06:11:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	247K
描述
Power MOSFET

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中文翻译

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数据手册

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SIHFBC20S 数据手册

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Surface Mount (IRFBC20S/SiHFBC20S)

600

• Low-Profile Through-Hole (IRFBC20L/SiHFBC20L)

Available

• Available in Tape and Reel (IRFBC20S/SiHFBC20S)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

R_DS(on)(Ω)

V_GS= 10 V

4.4

RoHS*

COMPLIANT

Q_g(Max.) (nC)

3.0

_gs(nC)

_gd(nC)

8.9

Configuration

Single

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

D²PAK (TO-263)

I²PAK (TO-262)

The D²PAK is a surface mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

N-Channel MOSFET

2.0

W in a typical surface mount application. The

through-hole version (IRFBC20L/SiHFBC20L) is a available

for low-profile applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

I²PAK (TO-262)

IRFBC20SPbF

SiHFBC20S-E3

IRFBC20S

IRFBC20STRLPbF^a

SiHFBC20STL-E3^a

IRFBC20STRL^a

IRFBC20LPbF

SiHFBC20L-E3

IRFBC20L

Lead (Pb)-free

SnPb

SiHFBC20S

SiHFBC20STL^a

SiHFBC20L

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

2.2

1.4

8.0

0.40

Continuous Drain Current^e

V_GSat 10 V

I_D

T_C=100°C

Pulsed Drain Current^{a, e}

Linear Derating Factor

Single Pulse Avalanche Energy^{b, e}

Avalanche Current^a

I_DM

W/°C

E_AS

I_AR

2.2

5.0

3.1

Repetiitive Avalanche Energy^a

E_AR

_A= 25 °C

Maximum Power Dissipation

Peak Diode Recovery dV/dt^{c, e}

P_D

V/ns

°C

T_C= 25 °C

dV/dt

3.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 31 mH, R_G= 25 Ω, I_AS= 2.2 A (see fig. 12).

c. I_SD≤ 2.2 A, dI/dt ≤ 40 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. Uses IRFBC20/SiHFBC20 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91107

S-Pending-Rev. A, 03-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与SIHFBC20S相关器件

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SIHFBC20S-E3	VISHAY	获取价格	Power MOSFET
SIHFBC20S-GE3	VISHAY	获取价格	TRANSISTOR 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND
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