Datasheet > SIHF9Z30-E3

SIHF9Z30-E3

更新时间： 2024-10-15 21:14:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	111K
描述
Power Field-Effect Transistor

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SIHF9Z30-E3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.72
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SIHF9Z30-E3 数据手册

IRF9Z30, SiHF9Z30

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

• P-Channel Versatility

V_DS(V)

_DS(on)()

Q_g(Max.) (nC)

- 50

• Compact Plastic Package

• Fast Switching

• Low Drive Current

• Ease of Paralleling

• Excellent Temperature Stability

V_GS= - 10 V

0.14

_gs(nC)

_gd(nC)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Note

Configuration

Single

* Lead (Pb)-containing terminations are not RoHS-compliant.

Exemptions may apply.

TO-220AB

DESCRIPTION

The power MOSFET technology is the key to Vishay’s

advanced line of power MOSFET transistors. The efficient

geometry and unique processing of the power MOSFET

design achieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

The p-channel power MOSFET’s are designed for

application which require the convenience of reverse

polarity operation. They retain all of the features of the more

common n-channel Power MOSFET’s such as voltage

control, very fast switching, ease of paralleling, and

excellent temperature stability.

P-Channel MOSFET

P-channel power MOSFETs are intended for use in power

stages where complementary symmetry with n-channel

devices offers circuit simplification. They are also very useful

in drive stages because of the circuit versatility offered by

the reverse polarity connection. Applications include motor

control, audio amplifiers, switched mode converters, control

circuits and pulse amplifiers.

ORDERING INFORMATION

Package

TO-220AB

IRF9Z30PbF

SiHF9Z30-E3

IRF9Z30

Lead (Pb)-free

SnPb

SiHF9Z30

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

- 50

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

- 18

Continuous Drain Current

V_GSat - 10 V

I_D

T_C= 100 °C

- 11

Pulsed Drain Current^a

I_DM

- 60

Linear Derating Factor

0.59

W/°C

Inductive Current, Clamped

L = 100 μH

I_LM

I_L

- 60

Unclamped Inductive Current (Avalanche Current)

Maximum Power Dissipation

- 3.1

_C= 25 °C

for 10 s

P_D

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^c

°C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

b. V_DD= - 25 V, starting T_J= 25 °C, L =100 μH, R_g= 25 

c. 0.063" (1.6 mm) from case.

S12-3048-Rev. A, 24-Dec-12

Document Number: 91459

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与SIHF9Z30-E3相关器件

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SIHF9Z34-E3	KERSEMI	获取价格	Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel
SIHF9Z34-E3	VISHAY	获取价格	Power MOSFET
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SIHF9Z34S-E3	VISHAY	获取价格	Power MOSFET
SIHF9Z34S-GE3	VISHAY	获取价格	TRANSISTOR 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND
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