IRF9Z34, SiHF9Z34
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
- 60
Available
• Repetitive Avalanche Rated
• P-Channel
RDS(on) (Ω)
VGS = - 10 V
0.14
RoHS*
Qg (Max.) (nC)
34
9.9
COMPLIANT
• 175 °C Operating Temperature
• Fast Switching
Q
Q
gs (nC)
gd (nC)
16
• Ease of Paralleling
Configuration
Single
• Simple Drive Requirements
• Lead (Pb)-free Available
S
TO-220
DESCRIPTION
G
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRF9Z34PbF
SiHF9Z34-E3
IRF9Z34
Lead (Pb)-free
SnPb
SiHF9Z34
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
- 60
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
T
C = 25 °C
- 18
Continuous Drain Current
VGS at - 10 V
ID
TC = 100 °C
- 13
A
Pulsed Drain Currenta
IDM
- 72
Linear Derating Factor
0.59
370
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
EAS
IAR
- 18
EAR
8.8
mJ
W
TC = 25 °C
PD
88
dV/dt
TJ, Tstg
- 4.5
- 55 to + 175
300d
10
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
for 10 s
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 1.3 mH, RG = 25 Ω, IAS = -18 A (see fig. 12).
c. ISD ≤ - 18 A, dI/dt ≤ 170 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
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1