Datasheet > SIHFB16N50K-E3

SIHFB16N50K-E3

更新时间： 2024-10-15 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体栅极晶体管开关脉冲驱动局域网
页数	文件大小	规格书
7页	2713K
描述
Low Gate Charge Qg Results in Simple Drive Requirement

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SIHFB16N50K-E3 数据手册

IRFB16N50K, SiHFB16N50K

Power MOSFET

FEATURES

• Low Gate Charge Q_gResults in Simple Drive

Requirement

PRODUCT SUMMARY

V_DS(V)

500

Available

R_DS(on)(Ω)

V_GS= 10 V

0.285

RoHS*

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Q_g(Max.) (nC)

COMPLIANT

_gs(nC)

• Fully Characterized Capacitance and Avalanche Voltage

and Current

Q_gd(nC)

Configuration

Single

• Low R_DS(on)

• Lead (Pb)-free Available

TO-220

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

• Hard Switched and High Frequency Circuits

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRFB16N50KPbF

SiHFB16N50K-E3

IRFB16N50K

Lead (Pb)-free

SnPb

SiHFB16N50K

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

500

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

V_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

2.3

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

310

E_AR

Maximum Power Dissipation

_C= 25 °C

P_D

280

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

- 55 to + 150

300^d

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. Starting T_J= 25 °C, L = 2.2 mH, R_G= 25 Ω, I_AS= 17 A.

c. I_SD≤ 17 A, dI/dt ≤ 500 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

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