IRFB20N50K, SiHFB20N50K
Power MOSFET
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
PRODUCT SUMMARY
VDS (V)
500
Available
RDS(on) (Ω)
VGS = 10 V
0.21
RoHS*
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Qg (Max.) (nC)
110
33
COMPLIANT
Q
gs (nC)
• Fully Characterized Capacitance and Avalanche Voltage
and Current
Qgd (nC)
54
Configuration
Single
• Low RDS(on)
D
• Lead (Pb)-free Available
TO-220
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRFB20N50KPbF
SiHFB20N50K-E3
IRFB20N50K
Lead (Pb)-free
SnPb
SiHFB20N50K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
500
30
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
TC = 25 °C
TC =100°C
20
Continuous Drain Current
VGS at 10 V
ID
12
A
Pulsed Drain Currenta
IDM
80
Linear Derating Factor
2.2
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
EAS
IAR
330
20
EAR
28
280
mJ
W
TC = 25 °C
PD
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
dV/dt
TJ, Tstg
6.9
V/ns
- 55 to + 150
300d
°C
N
for 10 s
6-32 or M3 screw
10
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 1.6 mH, RG = 25 Ω, IAS = 20 A.
c. ISD ≤ 20 A, dI/dt ≤ 350 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
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