Datasheet > SIHFB16N60L-E3

SIHFB16N60L-E3

更新时间： 2024-11-24 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	2711K
描述
Power MOSFET

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SIHFB16N60L-E3 数据手册

IRFB16N60L, SiHFB16N60L

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Super Fast Body Diode Eliminates the Need for

External Diodes in ZVS Applications

600

Available

R_DS(on)(Ω)

V_GS= 10 V

0.385

RoHS*

• Lower Gate Charge Results in Simpler Drive

Requirements

COMPLIANT

Q_g(Max.) (nC)

100

_gs(nC)

• Enhanced dV/dt Capabilities Offer Improved Ruggedness

Q_gd(nC)

Configuration

Single

• Higher Gate Voltage Threshold Offers Improved Noise

Immunity

• Lead (Pb)-free Available

TO-220

APPLICATIONS

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control Applications

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRFB16N60LPbF

SiHFB16N60L-E3

IRFB16N60L

Lead (Pb)-free

SnPb

SiHFB16N60L

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

600

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

V_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

2.5

W/°C

Single Pulse Avalanche Energy^b

Avalanche Current^a

E_AS

I_AR

310

Repetitive Avalanche Energy^a

E_AR

Maximum Power Dissipation

T_C= 25 °C

P_D

310

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

- 55 to + 150

300^d

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 2.5 mH, R_G= 25 Ω, I_AS=16 A, dV/dt = 10 V/ns (see fig. 12a).

c. I_SD≤ 16 A, dI/dt ≤ 340 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

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