Datasheet > SIE876DF

SIE876DF

更新时间： 2024-09-25 09:25:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	204K
描述
N-Channel 60-V (D-S) MOSFET

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SIE876DF 数据手册

New Product

SiE876DF

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

I_D(A)

Definition

TrenchFET^®Power MOSFET

Ultra Low Thermal Resistance Using Top-

Exposed PolarPAK^®Package for Double-

Sided Cooling

Silicon Package

•

V_DS(V)

R_DS(on)(Ω)

_g(Typ.)

Limit

0.0061 at V = 10 V

110

51 nC

•

Leadframe-Based New Encapsulated Package

- Die Not Exposed

- Same Layout Regardless of Die Size < 150 V

Low Q_gd/Q_gsRatio Helps Prevent Shoot-Through

100 % R_gand UIS Tested

Package Drawing:

www.vishay.com/doc?72945

•

PolarPAK

• Compliant to RoHS directive 2002/95/EC

APPLICATIONS

•

Primary Side Switch

Half-Bridge

Top View

Bottom View

Top surface is connected to pins 1, 5, 6, and 10

N-Channel MOSFET

For Related Documents:

www.vishay.com/ppg?64823

Ordering Information: SiE876DF-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

110 (Silicon Limit)

60^a(Package Limit)

T_C= 25 °C

_C= 70 °C

T_A= 25 °C

T_A= 70 °C

60^a

22^{b, c}

17.9^{b, c}

60^a

4.3^{b, c}

125

5.2^{b, c}

3.3^{b, c}

Continuous Drain Current (T_J= 150 °C)

I_D

Pulsed Drain Current

I_DM

I_S

_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

I_AS

E_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

_C= 25 °C

_C= 70 °C

P_D

Maximum Power Dissipation

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

°C

260

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 64823

S09-0862-Rev. A, 18-May-09

www.vishay.com

12 3 4 5 6 7...10

中文翻译

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与SIE876DF相关器件

型号	品牌	获取价格	描述	数据表
SIE876DF-T1-GE3	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
SIE878DF	VISHAY	获取价格	N-Channel 25-V (D-S) MOSFET
SIE878DF-T1-GE3	VISHAY	获取价格	N-Channel 25-V (D-S) MOSFET
SIE882DF	VISHAY	获取价格	N-Channel 25-V (D-S) MOSFET
SIE882DF-T1-GE3	VISHAY	获取价格	N-Channel 25-V (D-S) MOSFET
SiEH4800EW	VISHAY	获取价格	N-Channel 80 V (D-S) 175 °C MOSFET
SIE-MM17 Series	MERITEK	获取价格	SIE-MM17 Series \| Signal Inductor Wire Wound Ceramic Chip Type
SIF10N40C(TO-220&220FP&262&263)	SISEMIC	获取价格	导通电阻低开关速度快输入阻抗高符合RoHS规范
SIF10N40D(TO-220&220FP&262&263)	SISEMIC	获取价格	导通电阻低开关速度快输入阻抗高符合RoHS规范
SIF10N40DA(TO-220&220FP&262&263)2	SISEMIC	获取价格	导通电阻低开关速度快输入阻抗高符合RoHS规范

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