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SiDR402DP PDF预览

SiDR402DP

更新时间: 2024-11-22 14:54:51
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威世 - VISHAY /
页数 文件大小 规格书
9页 228K
描述
N-Channel 40 V (D-S) MOSFET

SiDR402DP 数据手册

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SiDR402DP  
Vishay Siliconix  
www.vishay.com  
N-Channel 40 V (D-S) MOSFET  
FEATURES  
PowerPAK® SO-8DC  
• TrenchFET® Gen IV power MOSFET  
• Very low RDS - Qg figure-of-merit (FOM)  
• Tuned for the lowest RDS - Qoss FOM  
D
8
D
7
D
D
6
5
S
• Top side cooling feature provides additional  
venue for thermal transfer  
1
S
• 100 % Rg and UIS tested  
2
S
3
S
1
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
4
G
Top View  
Bottom View  
D
APPLICATIONS  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) max. (Ω) at VGS = 10 V  
RDS(on) max. (Ω) at VGS = 4.5 V  
Qg typ. (nC)  
ID (A) a, g  
Configuration  
• Synchronous rectification  
• OR-ing  
• High power density DC/DC  
• Motor drive control  
• Battery management  
40  
0.00088  
0.00116  
53  
100  
Single  
G
N-Channel MOSFET  
• Load switch  
S
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
PowerPAK SO-8DC  
SiDR402DP-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
40  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
VGS  
V
+20, -16  
100 g  
100 g  
64.6 b, c  
51.7 b, c  
400  
100 a  
5.6 b, c  
50  
125  
125  
80  
6.25 b, c  
4 b, c  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous drain current (TJ = 150 °C)  
ID  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
Continuous source-drain diode current  
TA = 25 °C  
Single pulse avalanche current  
Single pulse avalanche Energy  
IAS  
EAS  
L = 0.1 mH  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Maximum power dissipation  
PD  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d, e  
TJ, Tstg  
-55 to +150  
260  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
RthJC  
TYPICAL  
MAXIMUM  
UNIT  
Maximum junction-to-ambient b, f  
Maximum junction-to-case (drain)  
Maximum junction-to-case (source)  
t 10 s  
Steady state  
Steady state  
15  
0.8  
1.1  
20  
1
1.4  
°C/W  
RthJC  
Notes  
a. Based on TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 54 °C/W  
g. Package limited  
S17-1076-Rev. A, 10-Jul-17  
Document Number: 75606  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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