Datasheet > SiDR622DP

SiDR622DP

更新时间： 2024-11-26 14:55:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	234K
描述
N-Channel 150 V (D-S) MOSFET

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SiDR622DP 数据手册

SiDR622DP

Vishay Siliconix

www.vishay.com

N-Channel 150 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

PowerPAK^®SO-8DC

• 100 % R_gand UIS tested

• Top side cooling feature provides additional

venue for thermal transfer

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

Top View

Bottom View

• Synchronous rectification

• Primary side switching

PRODUCT SUMMARY

V_DS(V)

R_DS(on)max. () at V_GS= 10 V

150

0.0177

0.0204

20.7

• High power density DC/DC

• H-bridge

_DS(on)max. () at V_GS= 7.5 V

• Motor drive control

Q_gtyp. (nC)

I_D(A) ^a

56.7

Configuration

Single

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAK SO-8DC

SiDR622DP-T1-GE3

SiDR622DP-T1-RE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

150

UNIT

V_DS

V_GS

_C= 25 °C

_C= 70 °C

56.7

45.3

64.6 ^{b, c}

51.7 ^{b, c}

100

60 ^g

5.6 ^{b, c}

125

Continuous drain current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

Continuous source-drain diode current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

Single pulse avalanche current

Single pulse avalanche Energy

I_AS

E_AS

_C= 70 °C

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

6.25 ^{b, c}

4 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

Maximum junction-to-case (source)

t  10 s

Steady state

0.8

1.1

1.4

°C/W

R_thJC

Notes

a. Based on T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 54 °C/W

g. Package limited

S22-0862-Rev. B, 24-Oct-2022

Document Number: 75951

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SiDR622DP相关器件

型号	品牌	获取价格	描述	数据表
SIDR622DP-T1-GE3	VISHAY	获取价格	MOSFET N-CHAN 150V
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SiDR626EP	VISHAY	获取价格	N-Channel 60 V (D-S) 175 °C MOSFET
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