Datasheet > SiDR626DP

SiDR626DP

更新时间： 2024-11-22 14:54:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	228K
描述
N-Channel 60 V (D-S) MOSFET

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SiDR626DP 数据手册

SiDR626DP

Vishay Siliconix

www.vishay.com

N-Channel 60 V (D-S) MOSFET

FEATURES

PowerPAK^®SO-8DC

• TrenchFET^®Gen IV power MOSFET

• Very low R_DS- Q_gfigure-of-merit (FOM)

• Tuned for the lowest R_DS- Q_ossFOM

• 100 % R_gand UIS tested

• Top side cooling feature provides

additional venue for thermal transfer

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Top View

Bottom View

APPLICATIONS

PRODUCT SUMMARY

• Synchronous rectification

• Primary side switch

• DC/DC converter

• Solar micro inverter

• Motor drive switch

V_DS(V)

_DS(on)max. (Ω) at V_GS= 10 V

R_DS(on)max. (Ω) at V_GS= 7.5 V

_DS(on)max. (Ω) at V_GS= 6 V

0.0017

0.0020

0.0026

Q_gtyp. (nC)

I_D(A) ^{a, g}

Configuration

N-Channel MOSFET

100

Single

• Battery and load switch

• Industrial

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAK SO-8DC

SiDR626DP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

100 ^a

42.8 ^{b, c}

34.2 ^{b, c}

200

100 ^a

5.6 ^{b, c}

125

6.25 ^{b, c}

4 ^{b, c}

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

Continuous source-drain diode current

T_A= 25 °C

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

P_D

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^c

T_J, T_stg

-55 to +150

260

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^b

Maximum junction-to-case (drain)

Maximum junction-to-case (source)

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t ≤ 10 s

Steady state

1.4

0.8

1.1

°C/W

R_thJC

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 54 °C/W

g. T_C= 25 °C

S17-1056-Rev. A, 10-Jul-17

Document Number: 75748

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SiDR626DP相关器件

型号	品牌	获取价格	描述	数据表
SiDR626EP	VISHAY	获取价格	N-Channel 60 V (D-S) 175 °C MOSFET
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SiDR626LEP	VISHAY	获取价格	N-Channel 60 V (D-S) 175 °C MOSFET
SIDR638DP-T1-GE3	VISHAY	获取价格	MOSFET N-CH 40V 100A SO-8
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