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SIDR638DP-T1-GE3

更新时间： 2024-11-25 22:59:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 205K
描述
MOSFET N-CH 40V 100A SO-8

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SIDR638DP-T1-GE3 数据手册

 浏览型号SIDR638DP-T1-GE3的Datasheet PDF文件第2页浏览型号SIDR638DP-T1-GE3的Datasheet PDF文件第3页浏览型号SIDR638DP-T1-GE3的Datasheet PDF文件第4页浏览型号SIDR638DP-T1-GE3的Datasheet PDF文件第5页浏览型号SIDR638DP-T1-GE3的Datasheet PDF文件第6页浏览型号SIDR638DP-T1-GE3的Datasheet PDF文件第7页 
SiDR638DP  
Vishay Siliconix  
www.vishay.com  
N-Channel 40 V (D-S) MOSFET  
FEATURES  
PowerPAK® SO-8DC  
• TrenchFET® Gen IV power MOSFET  
• Very low RDS - Qg figure-of-merit (FOM)  
• Tuned for the lowest RDS - Qoss FOM  
• Top side cooling feature provides additional  
venue for thermal transfer  
D
8
D
7
D
D
6
5
S
1
S
• 100 % Rg and UIS tested  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
S
3
S
1
4
G
Top View  
Bottom View  
APPLICATIONS  
D
PRODUCT SUMMARY  
VDS (V)  
RDS(on) max. (Ω) at VGS = 10 V  
• Synchronous rectification  
• DC/DC converters  
40  
0.00088  
0.00116  
63  
• OR-ing  
G
RDS(on) max. (Ω) at VGS = 7.5 V  
• Motor drive control  
Qg typ. (nC)  
ID (A)  
• Battery and load switch  
100 a, g  
N-Channel MOSFET  
S
Configuration  
Single  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
PowerPAK SO-8DC  
SiDR638DP-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
40  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
VGS  
V
+20, -16  
100 a  
100 a  
64.6 b, c  
51.7 b, c  
400  
100 a  
5.6 b, c  
50  
125  
125  
80  
6.25 b, c  
4 b, c  
TC = 25 °C  
C = 70 °C  
TA = 25 °C  
TA = 70 °C  
T
Continuous drain current (TJ = 150 °C)  
ID  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
Continuous source-drain diode current  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
L = 0.1 mH  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Maximum power dissipation  
PD  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
-55 to +150  
260  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient b  
Maximum junction-to-case (drain)  
Maximum junction-to-case (source)  
SYMBOL  
RthJA  
TYPICAL  
15  
MAXIMUM  
UNIT  
t ≤ 10 s  
Steady state  
Steady state  
20  
1.0  
1.4  
RthJC  
RthJC  
0.8  
1.1  
°C/W  
Notes  
a. Package limited  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 54 °C/W  
g. TC = 25 °C  
S17-1001-Rev. A, 03-Jul-17  
Document Number: 75312  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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