Datasheet > SiDR870ADP

SiDR870ADP

更新时间： 2024-11-26 14:52:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	261K
描述
N-Channel 100 V (D-S) MOSFET

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SiDR870ADP 数据手册

SiDR870ADP

Vishay Siliconix

www.vishay.com

N-Channel 100 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

PowerPAK^®SO-8DC

• Top side cooling feature provides additional

venue for thermal transfer

• 100 % R_gand UIS tested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

Top View

Bottom View

• Synchronous rectification

• Primary side switch

PRODUCT SUMMARY

V_DS(V)

• DC/DC converters

100

R_DS(on)max. (Ω) at V_GS= 10 V

R_DS(on)max. (Ω) at V_GS= 7.5 V

R_DS(on)max. (Ω) at V_GS= 4.5 V

Q_gtyp. (nC)

0.0066

0.0070

0.0105

25.5

• OR-ing

• Power supplies

• Motor drive control

N-Channel MOSFET

I_D(A)

95 ^a

• Battery and load switch

Configuration

Single

ORDERING INFORMATION

Package

PowerPAK SO-8DC

Lead (Pb)-free and halogen-free

SiDR870ADP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

100

95 ^a

UNIT

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

77.8

Continuous drain current (T_J= 150 °C)

I_D

21.8 ^{b, c}

17.4 ^{b, c}

300

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

95 ^a

5.6 ^{b, c}

125

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

P_D

6.25 ^{b, c}

4 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^c

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^b

Maximum junction-to-case (drain)

Maximum junction-to-case (source)

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t ≤ 10 s

Steady state

1.4

0.8

1.1

°C/W

R_thJC

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 54 °C/W

S17-1000-Rev. A, 03-Jul-17

Document Number: 77698

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIE01-01	FUJI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 16A, 100V V(RRM), Silicon,
SIE01-03	FUJI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 16A, 300V V(RRM), Silicon,
SIE01-06	FUJI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 16A, 600V V(RRM), Silicon,
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SI-E1125/500-6	SEMIKRON	获取价格	High voltage rectifiers
SI-E1125-500-6	SEMIKRON	获取价格	High voltage rectifiers
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