5秒后页面跳转
SiDR610DP PDF预览

SiDR610DP

更新时间: 2024-11-26 14:55:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 225K
描述
N-Channel 200 V (D-S) MOSFET

SiDR610DP 数据手册

 浏览型号SiDR610DP的Datasheet PDF文件第2页浏览型号SiDR610DP的Datasheet PDF文件第3页浏览型号SiDR610DP的Datasheet PDF文件第4页浏览型号SiDR610DP的Datasheet PDF文件第5页浏览型号SiDR610DP的Datasheet PDF文件第6页浏览型号SiDR610DP的Datasheet PDF文件第7页 
SiDR610DP  
Vishay Siliconix  
www.vishay.com  
N-Channel 200 V (D-S) MOSFET  
FEATURES  
• TrenchFET® technology optimizes balance of  
DS(on), Qg, Qsw, and Qoss  
PowerPAK® SO-8DC  
D
8
D
7
R
D
D
6
• Tuned for the lowest RDS - Qoss FOM  
5
S
• Top side cooling feature provides additional  
venue for thermal transfer  
• 100 % Rg and UIS tested  
1
S
2
S
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
S
1
4
G
Top View  
Bottom View  
D
APPLICATIONS  
• Fixed telecom  
PRODUCT SUMMARY  
VDS (V)  
200  
0.0319  
0.0334  
20  
• DC/DC converter  
RDS(on) max. () at VGS = 10 V  
G
• Primary and secondary side switch  
RDS(on) max. () at VGS = 7.5 V  
Qg typ. (nC)  
• Synchronous rectification  
I
D (A) a  
39.6  
• Power supplies  
S
Configuration  
Single  
• Class D amplifier  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
PowerPAK SO-8DC  
SiDR610DP-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
200  
20  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
VGS  
V
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
39.6  
31.7  
8.9 b, c  
7.1 b, c  
80  
Continuous drain current (TJ = 150 °C)  
ID  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
39.6  
5.6 b, c  
Continuous source-drain diode current  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
30  
45  
125  
80  
L = 0.1 mH  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Maximum power dissipation  
PD  
6.25 b, c  
4 b, c  
-55 to +150  
260  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient b, f  
Maximum junction-to-case (drain)  
Maximum junction-to-case (source)  
SYMBOL  
RthJA  
RthJC  
TYPICAL  
15  
MAXIMUM  
UNIT  
t 10 s  
Steady state  
Steady state  
20  
1
1.4  
0.8  
1.1  
°C/W  
RthJC  
Notes  
a. TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 54 °C/W  
S17-1313-Rev. A, 21-Aug-17  
Document Number: 75649  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SiDR610DP相关器件

型号 品牌 获取价格 描述 数据表
SiDR610EP VISHAY

获取价格

N-Channel 200 V (D-S) 175 °C MOSFET
SiDR622DP VISHAY

获取价格

N-Channel 150 V (D-S) MOSFET
SIDR622DP-T1-GE3 VISHAY

获取价格

MOSFET N-CHAN 150V
SiDR626DP VISHAY

获取价格

N-Channel 60 V (D-S) MOSFET
SiDR626EP VISHAY

获取价格

N-Channel 60 V (D-S) 175 °C MOSFET
SiDR626LDP VISHAY

获取价格

N-Channel 60 V (D-S) MOSFET
SiDR626LEP VISHAY

获取价格

N-Channel 60 V (D-S) 175 °C MOSFET
SIDR638DP-T1-GE3 VISHAY

获取价格

MOSFET N-CH 40V 100A SO-8
SiDR668ADP VISHAY

获取价格

N-Channel 100 V (D-S) MOSFET
SiDR668DP VISHAY

获取价格

N-Channel 100 V (D-S) MOSFET