Datasheet > SiDR570EP

SiDR570EP

更新时间： 2024-11-26 14:52:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	222K
描述
N-Channel 150 V (D-S) 175 °C MOSFET

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SiDR570EP 数据手册

SiDR570EP

Vishay Siliconix

www.vishay.com

N-Channel 150 V (D-S) 175 °C MOSFET

FEATURES

PowerPAK^®SO-8DC

• TrenchFET^®Gen V power MOSFET

• Very low R_DS- Q_gfigure-of-merit (FOM)

• Tuned for the lowest R_DS- Q_ossFOM

• 100 % R_gand UIS tested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous rectification

• Primary side switch

Top View

Bottom View

• DC/DC converters

PRODUCT SUMMARY

V_DS(V)

• OR-ing and hot swap switch

• Power supplies

150

0.0079

0.0085

35.1

_DS(on)max. (Ω) at V_GS= 10 V

_DS(on)max. (Ω) at V_GS= 7.5 V

• Motor drive control

N-Channel MOSFET

Q_gtyp. (nC)

_D(A)

• Battery management

90.9

Configuration

Single

ORDERING INFORMATION

Package

PowerPAK SO-8DC

SiDR570EP-T1-RE3

Lead (Pb)-free and halogen-free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

150

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

90.9 ^a

76 ^a

30.8 ^{b, c}

25.8 ^{b, c}

200

Continuous drain current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

136

6.8 ^{b, c}

Continuous source-drain diode current

T_A= 25 °C

Single pulse avalanche current

Single pulse avalanche energy

I_AS

L = 0.1 mH

E_AS

_C= 25 °C

_C= 70 °C

150

105

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

7.5 ^{b, c}

5.25 ^{b, c}

-55 to +175

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

S21-1180-Rev. A, 06-Dec-2021

Document Number: 63154

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiDR570EP相关器件

型号	品牌	获取价格	描述	数据表
SiDR578EP	VISHAY	获取价格	N-Channel 150 V (D-S) 175 °C MOSFET
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SiDR608EP	VISHAY	获取价格	N-Channel 45 V (D-S) 175 °C MOSFET
SiDR610DP	VISHAY	获取价格	N-Channel 200 V (D-S) MOSFET
SiDR610EP	VISHAY	获取价格	N-Channel 200 V (D-S) 175 °C MOSFET
SiDR622DP	VISHAY	获取价格	N-Channel 150 V (D-S) MOSFET
SIDR622DP-T1-GE3	VISHAY	获取价格	MOSFET N-CHAN 150V
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