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SI4463BDY-E3 PDF预览

SI4463BDY-E3

更新时间: 2024-11-08 21:54:23
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
5页 70K
描述
P-Channel 2.5-V (G-S) MOSFET

SI4463BDY-E3 技术参数

是否Rohs认证:符合生命周期:Not Recommended
Reach Compliance Code:compliant风险等级:8.33
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):9.8 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e3湿度敏感等级:1
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):3 W
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)Base Number Matches:1

SI4463BDY-E3 数据手册

 浏览型号SI4463BDY-E3的Datasheet PDF文件第2页浏览型号SI4463BDY-E3的Datasheet PDF文件第3页浏览型号SI4463BDY-E3的Datasheet PDF文件第4页浏览型号SI4463BDY-E3的Datasheet PDF文件第5页 
Si4463BDY  
Vishay Siliconix  
New Product  
P-Channel 2.5-V (G-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.011 @ V = 10 V  
13.7  
GS  
20  
0.014 @ V = 4.5 V  
12.3  
10.3  
GS  
0.020 @ V = 2.5  
V
GS  
S
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
D
Ordering Information: Si4463BDY—E3 (Lead Free)  
Si4463BDY-T1—E3 (Lead Free with Tape and Reel)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
DS  
V
V
GS  
"12  
T
= 25_C  
= 70_C  
9.8  
7.9  
13.7  
11.1  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
50  
a
continuous Source Current (Diode Conduction)  
I
2.7  
3.0  
1.36  
1.5  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.9  
0.95  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
35  
70  
17  
42  
84  
21  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72789  
S-40433—Rev. A, 15-Mar-04  
www.vishay.com  
1

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