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SI4463BDY-T1-GE3 PDF预览

SI4463BDY-T1-GE3

更新时间: 2024-11-20 20:05:51
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
9页 229K
描述
Small Signal Field-Effect Transistor, 9.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

SI4463BDY-T1-GE3 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.22
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):9.8 A最大漏极电流 (ID):9.8 A
最大漏源导通电阻:0.011 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):3 W
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

SI4463BDY-T1-GE3 数据手册

 浏览型号SI4463BDY-T1-GE3的Datasheet PDF文件第2页浏览型号SI4463BDY-T1-GE3的Datasheet PDF文件第3页浏览型号SI4463BDY-T1-GE3的Datasheet PDF文件第4页浏览型号SI4463BDY-T1-GE3的Datasheet PDF文件第5页浏览型号SI4463BDY-T1-GE3的Datasheet PDF文件第6页浏览型号SI4463BDY-T1-GE3的Datasheet PDF文件第7页 
Si4463BDY  
Vishay Siliconix  
P-Channel 2.5-V (G-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 13.7  
- 12.3  
- 10.3  
Available  
TrenchFET® Power MOSFETs  
0.011 at VGS = - 10 V  
0.014 at VGS = - 4.5 V  
0.020 at VGS = - 2.5 V  
- 20  
S
SO-8  
1
8
7
6
5
S
S
D
D
G
2
3
4
S
D
D
G
Top View  
D
Ordering Information: Si4463BDY-T1-E3 (Lead (Pb)-free)  
Si4463BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
- 20  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
12  
TA = 25 °C  
TA = 70 °C  
- 13.7  
- 11.1  
- 9.8  
- 7.9  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current  
- 50  
Continuous Source Current (Diode Conduction)a  
- 2.7  
3.0  
- 1.36  
1.5  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipationa  
PD  
W
1.9  
0.95  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
35  
Maximum  
Unit  
t 10 s  
42  
84  
21  
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
70  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
17  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
Document Number: 72789  
S09-0393-Rev. C, 09-Mar-09  
www.vishay.com  
1

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